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IHW40N65R5

650 V, 40 A IGBT Discretes with anti-parallel diode in TO-247 package
Data Sheet
package
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IHW40N65R5
IHW40N65R5
ea.
Data Sheet

Product details

  • Eoff (Hard Switching)
    0.37 mJ
  • Eon
    1.1 mJ
  • IC (@ 25° ) max
    80 A
  • IC (@ 100°) max
    40 A
  • ICpuls max
    120 A
  • IF max
    32 A
  • IFpuls max
    120 A
  • Irrm
    37.2 A
  • Package
    TO-247-3
  • Ptot max
    230 W
  • QGate
    193 nC
  • Qrr
    2750 nC
  • RGint
    0 Ω
  • RG
    10 Ω
  • Switching Frequency
    20 kHz to 150 kHz
  • td(off)
    260 ns
  • td(on)
    34 ns
  • Technology
    IGBT RC Soft Switching
  • tf
    13 ns
  • tr
    25 ns
  • VCE(sat)
    1.35 V
  • VCE max
    650 V
  • VF
    1.7 V
Recommended
OPN
IHW40N65R5XKSA1
Product Status active
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Reverse Conducting R5-H5 650 V, 40 A IGBT discrete with monolithically integrated diode TO247 package for soft switching applications and for designs which require some hard switching capabilities. The RC-H5 IGBT complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability.

Features

  • Lowest VCE(sat)and optimized Eoff
  • Loss reduction up to 30%
  • 650 V blocking voltage
  • Hard switching capable

Benefits

  • Best-in-class efficiency
  • increased reliability
  • For designs with fsw up to 40 kHz
  • lower junction and case temperature

Documents

Documents

Design resources

Partner solutions

Developer community

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