Active
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IGB50N60T

600 V, 50 A IGBT Discrete in TO263 package
Data Sheet
package
ea.
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IGB50N60T
IGB50N60T
ea.
Data Sheet

Product details

  • Eoff (Hard Switching)
    1.4 mJ
  • Eon
    1.2 mJ
  • IC (@ 100°) max
    90 A
  • IC (@ 25°) max
    64 A
  • ICpuls max
    150 A
  • Package
    D2PAK (TO-263-3)
  • Ptot max
    333 W
  • QGate
    310 nC
  • RGint
    0 Ω
  • RG
    7 Ω
  • Switching Frequency
    2 kHz to 20 kHz
  • td(off)
    299 ns
  • td(on)
    26 ns
  • Technology
    IGBT TRENCHSTOP™
  • tf
    29 ns
  • tr
    29 ns
  • VCE(sat)
    1.5 V
  • VCE max
    600 V
Recommended
OPN
IGB50N60TATMA1
Product Status active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Hard-switching 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Features

  • Lowest VCEsatdrop
  • Low switching losses
  • Positive temp. coeffi. in VCEsat
  • Easy parallel switching capability
  • Very soft, fast recovery diode
  • High ruggedness
  • Temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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