Active
RoHS Compliant

IGB20N60H3

600 V, 20 A IGBT3 in TO263 D2Pak package
Data Sheet
package

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IGB20N60H3
IGB20N60H3
Data Sheet

Product details

  • Eoff (Hard Switching)
    0.24 mJ
  • Eon
    0.45 mJ
  • IC (@ 100°) max
    20 A
  • IC (@ 25°) max
    40 A
  • ICpuls max
    80 A
  • Package
    D2PAK (TO-263-3)
  • Ptot max
    170 W
  • QGate
    120 nC
  • RGint
    0 Ω
  • RG
    14.6 Ω
  • Switching Frequency
    20 kHz to 100 kHz
  • td(off)
    194 ns
  • td(on)
    16 ns
  • Technology
    IGBT HighSpeed 3
  • tf
    11 ns
  • tr
    20 ns
  • VCE(sat)
    1.95 V
  • VCE max
    600 V
Recommended
OPN
IGB20N60H3ATMA1
Product Status active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
High speed 600 V , 20 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

Features

  • Low switching losses
  • Excellent Vce(sat)behavior
  • Fast switching behavior with Low EMI
  • Optimized diode for target applica.
  • Low gate resistor selection possible
  • Excellent switching behaviour
  • Short circuit capability 5µs
  • Offering Tj(max)of 175°C
  • Packaged with & without free. diode

Benefits

  • Low switching and conduction losses
  • Very good EMI behavior
  • Best-in-class 600 V IGBT efficiency
  • High current density

Documents

Documents

Design resources

Partner solutions

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