Active and preferred
RoHS Compliant
Lead-free

IDW30G120C5B

1200 V Silicion Carbide Schottky diode in TO-247-3 package
ea.
in stock

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IDW30G120C5B
IDW30G120C5B
ea.

Product details

  • I(FSM) max
    240 A
  • IF max
    30 A
  • IR
    17 µA
  • Package
    PG-TO247-3
  • Ptot max
    332 W
  • QC
    154 nC
  • Qualification
    Industrial
  • RthJC
    0.35 K/W
  • VF
    1.4 V
OPN
IDW30G120C5BFKSA1
Product Status active and preferred
Infineon Package
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CoolSiC™ Schottky diode generation 5 1200 V, 30 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Features

  • Best-in-class forward voltage (VF)
  • No reverse recovery charge
  • Mild positive temp. depend. of VF
  • Best-in-class surge current capab.
  • Excellent thermal performance

Documents

Design resources

Developer community

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