Active and preferred
RoHS Compliant

IAUMN04S7N009G

40 V, N-Ch, 0.86 mΩ, Automotive Power MOSFET, mTOLG (8x8), OptiMOS™ 7
ea.
in stock

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IAUMN04S7N009G
IAUMN04S7N009G
ea.

Product details

  • ID (@25°C) max
    200 A
  • Launch year
    2024
  • Operating Temperature
    -55 °C to 175 °C
  • Planned to be available until at least
    2038
  • Polarity
    N
  • QG (typ @10V)
    77 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    0.86 mΩ
  • Technology
    OptiMOS™-7
  • VDS max
    40 V
  • VGS(th)
    2.6 V
OPN
IAUMN04S7N009GAUMA1
Product Status active and preferred
Infineon Package
Package Name mTOLG
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name mTOLG
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
IAUMN04S7N009G is a high-performance, N-channel OptiMOS™ automotive power MOSFET. With an extended qualification beyond AEC-Q101, enhanced electrical testing, and a robust design, this device ensures reliable operation in harsh environments. Operating temperatures range from -55 to 175°C, MSL2 up to 260°C peak reflow, and 100% avalanche testing make it ideal for demaning automotive applications.

Features

  • Low RDS(on) in 8x8 mm2
  • High avalanche capability
  • High SOA ruggedness
  • Fast switching times (on/off)
  • Leadless packages with Cu-Clip
  • Thin wafer Cu-technology
  • 300 mm in-house production
  • Gullwing package with long leads
  • PPAP Capable Device

Benefits

  • High power density in 8x8
  • Increased current capability
  • Improved design ruggedness
  • Good switching performance
  • Efficient cooling in 8x8m mm2
  • Automotive quality package
  • Automotive quality production
  • High TCOB performance on IMS

Applications

Documents

Design resources

Developer community

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