Active and preferred
RoHS Compliant

FM25V10-GTR

High-Density 1 Mbit SPI F-RAM with Industrial Qualification
Data Sheet
package
board
ea.
in stock

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FM25V10-GTR
FM25V10-GTR
ea.
Data Sheet

Product details

  • Density
    1 MBit
  • Frequency
    40 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2 V to 3.6 V
  • Operating Voltage range
    2 V to 3.6 V
  • Organization (X x Y)
    128Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
Recommended
OPN
FM25V10-GTR
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM25V10-GTR is a 1-Mbit (128K × 8) nonvolatile F-RAM with a high-speed SPI interface supporting up to 40 MHz operation. It delivers virtually unlimited endurance of 100 trillion (1014) read/write cycles, 151-year data retention at 65°C, and operates from 2.0 V to 3.6 V across -40°C to +85°C.

Features

  • 1-Mbit nonvolatile F-RAM, 128K × 8
  • 100 trillion read/write cycles endurance
  • 151-year data retention at 65°C
  • NoDelay™ writes at bus speed
  • Up to 40 MHz SPI interface
  • Low power: 0.3 mA active, 5 μA sleep
  • VDD operation: 2.0 V to 3.6 V
  • Industrial temp: –40°C to +85°C
  • Hardware and software write protection
  • SPI modes 0 and 3 supported
  • Device and unique serial number
  • Direct hardware replacement for serial

Benefits

  • Eliminates data loss from write delays
  • Withstands frequent, rapid data logging
  • Reliable retention for 151 years at 65°C
  • Enables high-speed memory access
  • Reduces system power consumption
  • Operates in low-voltage designs
  • Reliable in harsh industrial environments
  • Protects data from accidental writes
  • Simple integration with standard SPI
  • Device traceability for security
  • No firmware changes for drop-in replacement
  • Outperforms flash/EEPROM in endurance

Documents

Documents

Design resources

Partner solutions

Developer community

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