Active and preferred
RoHS Compliant

FM25V10-GTR

High-Density 1 Mbit SPI F-RAM with Industrial Qualification
Data Sheet
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FM25V10-GTR
FM25V10-GTR
Data Sheet

Product details

  • Density
    1 MBit
  • Frequency
    40 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage (VCCQ)
    2 V to 3.6 V
  • Operating Voltage
    2 V to 3.6 V
  • Organization (X x Y)
    128Kb x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    0 ns
Recommended
OPN
FM25V10-GTR
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The FM25V10-GTR is a 1-Mbit nonvolatile memory employing advanced ferroelectric technology, providing reliable data retention for 151 years. With write operations at bus speed and substantial endurance, it is ideal for applications requiring frequent or rapid writes, such as data collection and industrial controls, addressing the limitations of serial flash and EEPROM.

Features

  • 1-Mbit F-RAM logically organized as 128K × 8
  • High-endurance 100 trillion (1014) read/writes
  • 151-year data retention 
  • NoDelay™ writes 
  • Advanced high-reliability ferroelectric process 
  • Very fast serial peripheral interface (SPI) 
  • Sophisticated write protection scheme
  • Device ID and Serial Number
  • Low power consumption
  • Low-voltage operation: VDD = 2.0 V to 3.6 V
  • Industrial temperature: –40 °C to +85 °C
  • Restriction of hazardous substances (RoHS) compliant

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