Active and preferred
RoHS Compliant

FM24W256-GTR

ea.
in stock

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FM24W256-GTR
FM24W256-GTR
ea.

Product details

  • Density
    256 kBit
  • Frequency
    1 MHz
  • Interfaces
    I2C
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2.7 V to 5.5 V
  • Operating Voltage range
    2.7 V to 5.5 V
  • Organization (X x Y)
    32Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
OPN
FM24W256-GTR
Product Status active and preferred
Infineon Package
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM24W256-GTR is a 256-Kbit (32K × 8) serial ferroelectric RAM (F-RAM) featuring an industry-standard I2C interface, NoDelay™ writes, and endurance of 100 trillion read/write cycles. It operates from 2.7 V to 5.5 V across –40°C to +85°C, with typical standby current of 15 μA and active current up to 100 μA at 100 kHz.

Features

  • 256-Kbit F-RAM organized as 32K × 8
  • 100 trillion (10¹⁴) read/write cycles
  • 151-year data retention at 65°C
  • NoDelay™ instant write operation
  • I2C interface up to 1 MHz
  • Low active current: 100 μA at 100 kHz
  • 15 μA typical standby current
  • VDD operation: 2.7 V to 5.5 V
  • Industrial temp range: –40°C to +85°C
  • Direct hardware replacement for I2C EEPROM
  • Supports 100 kHz, 400 kHz, 1 MHz I2C
  • Advanced high-reliability ferroelectric

Benefits

  • Enables frequent, fast data logging
  • Eliminates write delays for real-time systems
  • Reliable data storage for over a century
  • Reduces system power consumption
  • Simplifies design with wide voltage range
  • Operates in harsh industrial environments
  • Drop-in replacement for legacy EEPROM
  • Supports legacy and high-speed I2C
  • No wear-out concerns in write-intensive use
  • Low standby current extends battery life
  • No data polling needed after writes
  • High reliability for mission-critical data

Applications

Documents

Design resources

Developer community

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