Active and preferred
RoHS Compliant
Lead-free

FM24CL64B-GTR

High-Density 64 Kbit I²C F-RAM with Industrial Qualification
ea.
in stock

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FM24CL64B-GTR
FM24CL64B-GTR
ea.

Product details

  • Density
    64 kBit
  • Frequency
    1 MHz
  • Interfaces
    I2C
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2.7 V to 3.6 V
  • Operating Voltage range
    2.7 V to 3.6 V
  • Organization (X x Y)
    8Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
OPN
FM24CL64B-GTR
Product Status active and preferred
Infineon Package
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM24CL64B-GTR is a 64-Kbit (8 K × 8) automotive-grade serial F-RAM nonvolatile memory, supporting 10 trillion (10¹³) read/write cycles and 121-year data retention at 85°C. Operating from 3.0 V to 3.6 V, it features low active current (max 340 μA at 1 MHz), standby current (max 20 μA at 125°C), and I2C interface up to 1 MHz. NoDelay™ writes, AEC-Q100 Grade 1 compliance, and an 8-pin SOIC package enable direct EEPROM replacement in automotive and industrial data logging.

Features

  • 64-Kbit ferroelectric random access memory
  • 8 K × 8 logical organization
  • 10^13 read/write cycle endurance
  • 121-year data retention at 85°C
  • NoDelay™ instant write technology
  • I2C serial interface up to 1 MHz
  • Low active current: 120 μA at 100 kHz
  • Low standby current: 6 μA at 85°C
  • VDD operation: 3.0 V to 3.6 V
  • Data integrity from –40°C to +125°C
  • Write protection pin (WP)
  • Direct hardware replacement for serial EEPROM

Benefits

  • Reliable nonvolatile storage for frequent
  • Eliminates write delays for instant updates
  • 10^13 cycles enables long product life
  • 121-year retention ensures data safety
  • Low power reduces system energy use
  • I2C up to 1 MHz enables fast communication
  • Wide temp range supports harsh environments
  • Drop-in replacement simplifies upgrades
  • Write protection prevents accidental changes
  • No data polling needed after writes
  • High endurance minimizes maintenance
  • Consistent operation across voltage range

Documents

Design resources

Developer community

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