FF8MR12W1M1H_B70
Active and preferred
RoHS Compliant

FF8MR12W1M1H_B70

CoolSiC™ MOSFET half-bridge module 1200 V
ea.
in stock

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FF8MR12W1M1H_B70
FF8MR12W1M1H_B70
ea.


Product details

  • Applications
    ESS, EV Charger, Solar, UPS
  • Configuration
    Half-bridge
  • Dimensions (length)
    62.8 mm
  • Dimensions (width)
    33.8 mm
  • Features
    AlN, PressFIT
  • Housing
    Easy 1B
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    8.1 mΩ

OPN
FF8MR12W1M1HB70BPSA1
Product Status active and preferred
Infineon Package AG-EASY1B
Package Name N/A
Packing Size 24
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Country of Assembly (CoA)
DE
Country of Diffusion (CoD)
MY
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package AG-EASY1B
Package Name -
Packing Size 24
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
DE
Country of Diffusion (CoD)
MY
ea.
in stock
EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 1200 V, 8 mΩ G1 with integrated NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic.

Features

  • Best in class with 12.25mm height
  • Leading edge WBG material
  • Very low module stray inductance
  • Enhanced CoolSiC™ MOSFET Gen 1
  • With enhanced 1 trench technology
  • Enlarged gate drive voltage window
  • Voltage window from 15 to 18 & 0 to -5 V
  • Extended maximum gate-source voltages
  • Gate-source voltages of +23 V and -10 V
  • Tvjop: overload condition up to 175°C
  • Integrated NTC temperature sensor

Benefits

  • Outstanding module efficiency
  • System cost advantages
  • System efficiency improvement
  • Reduced cooling requirements
  • Enabling higher frequency
  • Increase of power density
  • Thermal conductivity of DCB material
Documents

Design resources

Developer community