NEW
Active and preferred
RoHS Compliant

FF2000R17T2P8

NEW
1700V, 2000A half-bridge IGBT module
Data Sheet

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FF2000R17T2P8
FF2000R17T2P8
Data Sheet

Product details

  • Configuration
    half-bridge
  • Dimensions (length)
    140 mm
  • Dimensions (width)
    99.8 mm
  • Housing
    XHP™ 2
  • IC(nom) / IF(nom)
    2000 A
  • IC max
    2000 A
  • Qualification
    Industrial
  • Technology
    IGBT8 - P8
  • VCE(sat) (Tvj=25°C typ)
    1.65 V
  • VCES / VRRM
    1700 V
  • VF (Tvj=25°C typ)
    1.95 V
  • Voltage Class max
    1700 V
Recommended
OPN
FF2000R17T2P8BPSA1
Product Status active and preferred
Infineon Package AG-XHP2K17
Package Name N/A
Packing Size 1
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package AG-XHP2K17
Package Name -
Packing Size 1
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
XHP™ 2 1700V, 2000A half-bridge IGBT module with improved chipset IGBT8 and EC8, high power density and improved thermal management for more efficiency.

Features

  • Symmetrical module design
  • Low-inductive housing
  • Cu baseplate
  • Low gate charge QG of IGBT 8 for improved paralleling
  • Elevated softness of EmCon 8 for clean switching
  • High performance ceramic for improved thermal cycling and highest performance
  • Continuous operating temperatures @ Tvj = 175 °C

Benefits

  • High power density
  • Energy efficiency
  • Improved thermal performance
  • Low switching and conduction losses

Documents

Documents

Design resources

Partner solutions

Developer community

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