FC560R12D3H7F_B78
NEW
Active and preferred
RoHS Compliant

FC560R12D3H7F_B78

NEW
1200 V, 560 A in 3-level boost topology IGBT module
ea.
in stock

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FC560R12D3H7F_B78
FC560R12D3H7F_B78
ea.


Product details

  • Configuration
    Booster
  • Dimensions (length)
    112.2 mm
  • Dimensions (width)
    65.2 mm
  • Features
    High current pin
  • Housing
    EasyPACK™ HD3
  • IC(nom) / IF(nom)
    280 A
  • IC max
    280 A
  • Qualification
    Industrial
  • Technology
    IGBT7 - H7
  • VCE(sat) (Tvj=25°C typ)
    1.22 V
  • VCES / VRRM
    1200 V
  • VF (Tvj=25°C typ)
    2.5 V
  • Voltage Class max
    1200 V

OPN
FC560R12D3H7FB78BPSA1
Product Status active and preferred
Infineon Package AG-EASYHD
Package Name N/A
Packing Size 8
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package AG-EASYHD
Package Name -
Packing Size 8
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
EasyPACK™ HD3 1200 V, 560 A in 3-level boost IGBT module with 1200 V TRENCHSTOP™ IGBT7 H7, SiC diode, 1600 V emitter controlled 8 rectifier diode with 2 MPPT per module and Integrated NTC.

Features

  • Easy family with baseplate for high power density and high voltage application
  • High performance substrate
  • Flexible pin grid with high current solder pin
  • CTI 600 materials with high RTI
  • High performance gel
  • Latest chip technologies H7
  • Emitter controlled 8 rectifier diode, SiC Diode

Benefits

  • Tvj 175 degree continuous
  • Enable long-term thermal and mechanical stability
  • Enable high power rating, high power density
  • Support DC system up to 2000 V
  • Low stray inductance design with high system efficiency
  • easy to design

Applications

Documents

Design resources

Developer community