Active and preferred
RoHS Compliant

DF200R12W1H3_B27

1200 V, 200 A booster IGBT module
Data Sheet

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DF200R12W1H3_B27
DF200R12W1H3_B27
Data Sheet

Product details

  • Configuration
    Booster
  • Dimensions (length)
    48 mm
  • Dimensions (width)
    33.8 mm
  • Features
    PressFIT
  • Housing
    EasyPACK™ 1B
  • IC(nom) / IF(nom)
    200 A
  • IC max
    200 A
  • Qualification
    Industrial
  • Technology
    IGBT HighSpeed 3
  • VCE(sat) (Tvj=25°C typ)
    1.3 V
  • VF (Tvj=25°C typ)
    2 V
  • Voltage Class max
    1200 V
Recommended
OPN
DF200R12W1H3B27BOMA1
Product Status active and preferred
Infineon Package AG-EASY1B
Package Name N/A
Packing Size 24
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package AG-EASY1B
Package Name -
Packing Size 24
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
EasyPACK™ 1B 1200 V, 200 A booster IGBT modules with the proven PressFIT technology and High Speed IGBT H3.

Features

  • High Speed IGBT H3
  • Low switching losses
  • Fast Silicon diode 1200V
  • Al2O3 substrate
  • Integrated NTC temperature sensor
  • PressFIT contact technology

Applications

Photovoltaic

Documents

Documents

Design resources

Partner solutions

Developer community

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