Active and preferred
RoHS Compliant

DD450S45T3E4_B5

4500 V, 450 A Diode IGBT module
ea.
in stock

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DD450S45T3E4_B5
DD450S45T3E4_B5
ea.

Product details

  • Configuration
    Diodes
  • Dimensions (length)
    140 mm
  • Dimensions (width)
    99.8 mm
  • Features
    10.4kV isolation
  • Housing
    XHP™ 3
  • IC(nom) / IF(nom)
    450 A
  • IC max
    450 A
  • Qualification
    Industrial, Traction
  • Technology
    Diode
  • VCES / VRRM
    4500 V
  • VF (Tvj=25°C typ)
    2.6 V
  • Voltage Class max
    4500 V
OPN
DD450S45T3E4B5BPSA1
Product Status active and preferred
Infineon Package AG-XHP3K45
Package Name N/A
Packing Size 1
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package AG-XHP3K45
Package Name -
Packing Size 1
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
XHP™ 3 4500 V, 450 A diode IGBT module with Emitter Controlled E4 Diode and enhanced isolation of 10.4 kV. Predestined to be combined with IGBT module FF450R45T3E4_B5

Features

  • High DC stability
  • High surge current capability
  • Low inductive design
  • Package with CTI > 600
  • Package insulation 10.4 kV AC 1min
  • Tvj op=150°C
  • AlSiC base plate with AlN substrate
  • for increased Thermal cycling
  • Fire & smoke EN45545 R22, R23 : HL3
  • Modular concept
  • Dual Diode

Benefits

  • Standardized housing: 100x140x40 mm
  • Long service life
  • Enables clean electrical design
  • Enables clean mechanical design
  • Easy set-up of 3level NPC1 topology
  • Easy set-up of parallelling
  • Scalability in smaller steps
  • One type for various power levels
  • Smoother supply chain handling
  • Enables downsizing on system level
  • Low FIT Rate
  • less EMI issues

Documents

Design resources

Developer community

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