Active and preferred

CYRS2642KV18-250GCMB

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CYRS2642KV18-250GCMB
CYRS2642KV18-250GCMB

Product details

  • Architecture
    QDR-II+, ODT
  • Bank Switching
    N
  • Burst Length (Words)
    2
  • Data Width
    x18
  • Density
    144 MBit
  • Device weight
    6152.8 mg
  • ECC
    N
  • Family
    ODT, QDR-II+
  • Frequency
    250 MHz
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Pb
  • On-Die Termination
    Y
  • Operating Temperature
    -55 °C to 125 °C
  • Operating Voltage
    1.7 V to 1.9 V
  • Organization (X x Y)
    4Mb x 36
  • Peak Reflow Temp
    220 °C
  • Planned to be available until at least
    2033
  • Qualification
    Military
  • Read Latency (Cycles)
    2
OPN
CYRS2642KV18-250GCMB
Product Status active and preferred
Infineon Package
Package Name CCGA-165 (001-58969)
Packing Size 1
Packing Type TRAY
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name CCGA-165 (001-58969)
Packing Size 1
Packing Type TRAY
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Infineon’s 144Mb Quad Data Rate (QDR®)-II+, CYRS164x and CYRS264x series, are high performance, synchronous pipelined SRAMs designed with Infineon’s RADSTOP™ technology.  The 144Mb QDR®-II+ memories are available in x18/x36 and two-word/four-word data bus configurations, and optional on-die termination (ODT).  Our QDR®-II+ provides low latency and random memory access capability ideal for high speed cache applications. Infineon’s radiation hardened memories are QML-V certified, meeting the reliability and lifecycle demands of extreme environments. Our RADSTOPTM memory solutions enhance overall system computing limits while providing Size, Weight, and Power (SWaP) benefits and greater design flexibility. Infineon’s state-of-the art RADSTOP™ technology is radiation hardened through proprietary design and process hardening techniques. NOTE:  this part is superseded by 5962R1821401VXF

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