Active and preferred
RoHS Compliant

CYRS1061G30-10GGMB

Data Sheet
package

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CYRS1061G30-10GGMB
CYRS1061G30-10GGMB
Data Sheet

Product details

  • Density
    16 MBit
  • Device weight
    2300 mg
  • Family
    FAST SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Au
  • Operating Temperature
    -55 °C to 125 °C
  • Operating Voltage
    2.2 V to 3.6 V
  • Operating Voltage (VCCQ)
    2.2 V to 3.6 V
  • Organization (X x Y)
    1M x 16
  • Peak Reflow Temp
    220 °C
  • Planned to be available until at least
    2033
  • Qualification
    Military
  • Speed
    10 ns
Recommended
OPN
CYRS1061G30-10GGMB
Product Status active and preferred
Infineon Package
CG-TSOP-54
Package Name CER-TSOP-II-54 (002-18372)
Packing Size 1
Packing Type TRAY
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
CG-TSOP-54
Package Name CER-TSOP-II-54 (002-18372)
Packing Size 1
Packing Type TRAY
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Infineon’s 16Mb asynchronous SRAM family, designed with Infineon’s patented RADSTOP™ technology is ideal for space as well as other harsh environment applications. The 16Mb Fast SRAM is a high-performance, low power SRAM with ECC organized as 1-Mbit by 16-bits. Note: this part is superseded by 5962R2020201VXC.

Features

  • 16 Mb density, 1M x 16
  • Embedded ECC (SEC)
  • 10ns access times
  • 1.8–5.0 V operating voltage
  • –55°C to +125°C military temperature grade
  • 54-lead ceramic TSOP (CTSOP)
  • Radiation performance
  • TID: 200 Krad
  • SEL: > 60 MeV.cm2/mg @ 95°C
  • SEU: ≤ 1 x 10-10 upsets/bit-day
  • QML-V qualified

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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