Active and preferred

CY7S1061GE30-10BVM

Our asynchronous fast SRAMs are industry’s fastest parallel asynchronous SRAM solutions with fastest access time of 10 ns.

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CY7S1061GE30-10BVM
CY7S1061GE30-10BVM

Product details

  • Density
    16 MBit
  • Family
    FAST SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Pb
  • Operating Temperature
    -55 °C to 125 °C
  • Operating Voltage (VCCQ)
    2.2 V to 3.6 V
  • Operating Voltage
    2.2 V to 3.6 V
  • Organization (X x Y)
    1M x 16
  • Peak Reflow Temp
    220 °C
  • Planned to be available until at least
    2033
  • Qualification
    Military
  • Speed
    10 ns
OPN
CY7S1061GE30-10BVM
Product Status active and preferred
Infineon Package
Package Name BGA-48 (51-85150)
Packing Size 2400
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name BGA-48 (51-85150)
Packing Size 2400
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Infineon’s SRAM solutions offer a long-term support commitment, providing our customers with the assurance that they will continue to receive support and maintenance for their products over an extended period. Our asynchronous SRAMs are commonly used as expansion memory for cache and buffer memory applications, where their low power consumption and high-speed performance make them an ideal choice for defense applications.

Features

  • 16 Mbit density
  • 1M words x 16-bit organization
  • 10ns access speed
  • POWERSNOOZE™
  • Embedded error-correcting code (ECC)
  • for single-bit error correction
  • -55°C to 125°C
  • 48-ball VFBGA

Benefits

  • Efficient asynchronous SRAM solutions
  • Technology FIT rate of <0.3 PPM
  • 1000x more reliable than standard SRAMs

Applications

Documents

Design resources

Developer community

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