CY7C15632KV18-450BZXC
Active and preferred
RoHS Compliant

CY7C15632KV18-450BZXC

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CY7C15632KV18-450BZXC
CY7C15632KV18-450BZXC

Product details

  • Density
    72 MBit
  • Family
    QDR-II+
  • Frequency
    450 MHz
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    0 °C to 70 °C
  • Operating Voltage range
    1.7 V to 1.9 V
  • Organization (X x Y)
    4M x 18
  • Peak Reflow Temp
    260 °C
  • Qualification
    Commercial
OPN
CY7C15632KV18-450BZXC
Product Status active and preferred
Infineon Package
Package Name FBGA-165 (51-85180)
Packing Size 680
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name FBGA-165 (51-85180)
Packing Size 680
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
CY7C15632KV18-450BZXC is a 72-Mbit QDR II+ synchronous pipelined SRAM (4 M × 18) with separate read and write ports to eliminate bus turnarounds. It supports a 450 MHz clock and DDR transfers on both ports, plus four-word burst operation with 2.5-cycle read latency. It operates from 0°C to 70°C with core VDD of 1.8 V ±0.1 V and VDDQ from 1.4 V to VDD, in a 165-ball FBGA Pb-free package.

Features

  • QDR II+ SRAM, 72 Mbit
  • Separate read/write data ports
  • Concurrent read and write access
  • 500 MHz clock operation
  • DDR I/O, 1000 MHz data transfer
  • Four-word burst architecture
  • 2.5-cycle read latency (DOFF=H)
  • Echo clocks CQ/CQ for capture
  • QVLD pin indicates valid data
  • IEEE 1149.1 JTAG boundary scan

Benefits

  • 72 Mbit fits large buffers
  • No bus turnaround, higher BW
  • Parallel R/W cuts contention
  • 500 MHz supports high throughput
  • DDR doubles data rate per clock
  • Burst lowers address bus toggling
  • Predictable latency simplifies timing
  • CQ/CQ eases high-speed capture
  • QVLD reduces read data errors
  • JTAG speeds board test/debug

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