Active and preferred
RoHS Compliant
Lead-free

CY62177EV30LL-55BAXI

High-Density 32 Mbit MoBL™ Parallel SRAM for Industrial Applications with Wide Temperature Range
Data Sheet
package
ea.
in stock

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CY62177EV30LL-55BAXI
CY62177EV30LL-55BAXI
ea.
Data Sheet

Product details

  • Density
    32 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage
    2.2 V to 3.6 V
  • Operating Voltage (VCCQ) max
    3.6 V
  • Organization (X x Y)
    2M x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    55 ns
Recommended
OPN
CY62177EV30LL-55BAXI
Product Status active and preferred
Infineon Package
PG-TFBGA-48
Package Name FBGA-48 (51-85191)
Packing Size 2100
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TFBGA-48
Package Name FBGA-48 (51-85191)
Packing Size 2100
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CY62177EV30LL-55BAXI is a high-performance CMOS static RAM designed for ultra-low active current, ensuring efficient power management and providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. Its automatic power-down feature significantly reduces power consumption when addresses are not toggling, offering reliable performance with minimal power usage.

Features

  • Very high speed: 55 ns
  • Wide voltage range: 2.2 V to 3.6 V
  • Typical standby current: 3 µA
  • Maximum standby current: 25 µA
  • Typical active current: 10 mA at f = 1 MHz
  • Easy memory expansion with CE1, CE2, and OE Features
  • Automatic power down when deselected

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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