CY62157G30-45BVXI
Active and preferred
RoHS Compliant
Lead-free

CY62157G30-45BVXI

Datasheet
package
ea.
in stock

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CY62157G30-45BVXI
CY62157G30-45BVXI
ea.
Datasheet


Product details

  • Density
    8 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    512K x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial

Recommended
OPN
CY62157G30-45BVXI
Product Status active and preferred
Infineon Package
PG-VFBGA-48
Package Name VFBGA-48 (51-85150)
Packing Size 480
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Est. Longevity Date 2033
Launch Date 03/2022
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
TW
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-VFBGA-48
Package Name VFBGA-48 (51-85150)
Packing Size 480
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Est. Longevity Date 2033
Launch Date 03/2022
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
TW
ea.
in stock
CY62157G30-45BVXI is an 8-Mbit (512K × 16) MoBL CMOS SRAM with embedded ECC that detects and corrects single-bit errors on accessed data. It operates from 2.2 V to 3.6 V over -40°C to 85°C with 45 ns access time. Standby current (ISB2) is 6.5 µA max at 85°C, and ICC is 25 mA max at f = 22.22 MHz. It supports dual chip enable, BHE/BLE byte writes, and byte power-down. BV is a Pb-free 48-ball VFBGA.

Features

  • 8-Mbit SRAM (512K × 16)
  • Embedded ECC corrects 1-bit errors
  • ERR pin flags corrected 1-bit errors
  • 45 ns read/write cycle time
  • VCC supply 1.65 V to 3.6 V
  • Standby current 6.5 µA max
  • Data retention at VDR = 1.0 V
  • Dual chip enable inputs (CE1, CE2)
  • Byte writes via BHE/BLE signals
  • Hi-Z outputs when deselected/OE HIGH
  • Byte power-down via BHE & BLE HIGH
  • HBM ESD rating >2001 V

Benefits

  • ECC improves data integrity in SRAM
  • ERR output simplifies error handling
  • 45 ns access supports fast CPUs
  • 1.65–3.6 V fits multi-rail systems
  • 6.5 µA max cuts standby power
  • 1.0 V retention saves backup energy
  • Dual CE supports simple bank select
  • Byte writes reduce bus bandwidth use
  • Hi-Z outputs ease bus sharing
  • Byte power-down saves idle power
  • HBM >2001 V improves robustness
  • Clear timing specs speed validation

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