CY62157ELL-55ZSXE
Active and preferred
RoHS Compliant
Lead-free

CY62157ELL-55ZSXE

Datasheet
package
ea.
in stock

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CY62157ELL-55ZSXE
CY62157ELL-55ZSXE
ea.
Datasheet


Product details

  • Density
    8 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn;Ni/Pd/Au
  • Operating Temperature range
    -40 °C to 125 °C
  • Operating Voltage (VCCQ) max
    5.5 V
  • Operating Voltage range
    4.5 V to 5.5 V
  • Organization (X x Y)
    512K x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    See roadmap
  • Qualification
    Automotive
  • Speed
    55 ns

Recommended
OPN
CY62157ELL-55ZSXE
Product Status active and preferred
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 135
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
US
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 135
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
US
ea.
in stock
CY62157ELL-55ZSXE is an 8-Mbit (512 K × 16) CMOS static SRAM in a 44-pin TSOP II (Pb-free) package, specified for Automotive-E (-40°C to +125°C). It runs from 4.5 V to 5.5 V and supports 55 ns access, with CE/OE control and BHE/BLE byte enables for 8-bit transfers. Automatic power-down reduces standby to 2 µA typical (30 µA max), while operating ICC is 1.8 mA typical at 1 MHz (4 mA max).

Features

  • 512K × 16 CMOS SRAM
  • 4.5 V to 5.5 V single-supply
  • 45 ns read cycle time (tRC)
  • OE access 22 ns max (tDOE)
  • 1.8 mA active at 1 MHz (typ)
  • 2 µA standby current (typ)
  • Auto power-down when deselected
  • Byte writes via BHE/BLE enables
  • CE1/CE2 chip enables for expand
  • TTL input level compatible
  • I/O high-Z on deselect/OE HIGH
  • ESD withstand > 2001 V (HBM)

Benefits

  • Simple 16-bit memory interface
  • Runs directly from 5 V rails
  • Fast reads cut CPU wait states
  • OE gating helps shared bus I/O
  • Lower run current saves energy
  • µA standby extends battery life
  • Reduces power when memory idle
  • Byte writes reduce bus traffic
  • Easy multi-chip memory scaling
  • Works with legacy TTL CPUs
  • High-Z outputs avoid contention
  • ESD robustness reduces failures
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