CY62148G-45ZSXI
Active and preferred
RoHS Compliant
Lead-free

CY62148G-45ZSXI

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CY62148G-45ZSXI
CY62148G-45ZSXI

Product details

  • Density
    4 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    5.5 V
  • Operating Voltage range
    4.5 V to 5.5 V
  • Organization (X x Y)
    512K x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    45 ns
OPN
CY62148G-45ZSXI
Product Status active and preferred
Infineon Package
Package Name TSOP-II-32 (51-85095)
Packing Size 234
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name TSOP-II-32 (51-85095)
Packing Size 234
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
CY62148G-45ZSXI is a 4-Mbit (512K × 8) MoBL™ CMOS SRAM with embedded ECC for single-bit error correction. The -45 speed grade supports 45 ns access. It operates over -40°C to +85°C from a 4.5 V to 5.5 V supply and supports 1.0-V data retention. Automatic power-down standby is 3.5 µA typical and 8.7 µA max. The device uses CE/WE/OE control and is available in a 32-pin TSOP II Pb-free package.

Features

  • 4-MB SRAM (512K × 8)
  • 45 ns / 55 ns access time
  • Embedded ECC, single-bit correct
  • Separate CE, OE, WE control pins
  • HI-Z outputs when deselected
  • 1.0 V data retention mode
  • Data retention current 13 µA max
  • Standby current 8.7 µA max
  • VCC options: 1.65–2.2/3.6/5.5 V
  • Industrial temp: −40°C to +85°C
  • Input/output leakage ±1 µA max
  • Output enable to data 22/25 ns max

Benefits

  • Fits 8-bit, 4-MB SRAM buffers
  • Fast reads/writes cut wait states
  • ECC helps protect stored data
  • Simple async interface eases design
  • HI-Z supports shared data buses
  • Retains data with 1.0 V backup
  • Low ICCDR extends backup time
  • Ultra-low standby saves energy
  • Multiple VCC eases rail selection
  • Works across −40°C to +85°C
  • Low leakage helps low-power I/O
  • Faster OE improves read latency

Applications

Documents

Design resources

Developer community

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