CY62138EV30LL-45BVXI
Active and preferred
RoHS Compliant
Lead-free

CY62138EV30LL-45BVXI

Datasheet
package
ea.
in stock

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CY62138EV30LL-45BVXI
CY62138EV30LL-45BVXI
ea.
Datasheet


Product details

  • Density
    2 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2.2 V to 3.6 V
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    256K x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    See roadmap
  • Qualification
    Industrial
  • Speed
    45 ns

Recommended
OPN
CY62138EV30LL-45BVXI
Product Status active and preferred
Infineon Package
PG-VFBGA-36
Package Name VFBGA-36 (51-85149)
Packing Size 960
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-VFBGA-36
Package Name VFBGA-36 (51-85149)
Packing Size 960
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
ea.
in stock
CY62138EV30LL-45BVXI is a 2-Mbit (256 K × 8) CMOS SRAM with 45 ns access time for fast parallel memory. It runs from 2.2 V to 3.6 V over -40°C to +85°C and uses CE/OE/WE control with automatic CE power-down and three-state I/Os. ICC is 2 mA typ at 1 MHz and 15 mA typ at fmax (20 mA max), while standby is 1 µA typ (7 µA max). MIL-STD-883 ESD > 2001 V. Pb-free 36-ball VFBGA (6 mm × 8 mm).

Features

  • 256 K × 8 CMOS SRAM array
  • 45 ns read/write cycle time
  • VCC operating 2.2 V to 3.6 V
  • 1 µA typ standby, 7 µA max
  • 2 mA typ active at 1 MHz
  • Auto power-down on CE HIGH
  • Data retention at VCC = 1 V
  • ICCDR 0.8 µA typ at 1 V
  • CE/OE controls for expansion
  • High-Z outputs when deselected
  • 10 pF max CIN and COUT

Benefits

  • Fits 8-bit memory bus designs
  • 45 ns supports fast CPU access
  • 2.2-3.6 V works with 3 V rails
  • 1 µA standby extends battery life
  • Low active current cuts energy
  • Auto power-down saves idle power
  • Retains data with backup supply
  • µA retention enables keep-alive
  • CE/OE simplify bank expansion
  • High-Z I/O eases bus sharing
  • Low capacitance eases timing/EMI

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