CY62137FV30LL-45ZSXI
Active and preferred
RoHS Compliant
Lead-free

CY62137FV30LL-45ZSXI

Data Sheet
package
ea.
in stock

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CY62137FV30LL-45ZSXI
CY62137FV30LL-45ZSXI
ea.
Data Sheet

Product details

  • Density
    2 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2.2 V to 3.6 V
  • Operating Voltage (VCCQ) max
    3.6 V
  • Organization (X x Y)
    128K x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    45 ns
Recommended
OPN
CY62137FV30LL-45ZSXI
Product Status active and preferred
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 675
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 675
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CY62137FV30LL-45ZSXI is a 2-Mbit (128 K × 16) CMOS asynchronous SRAM in a Pb-free 44-pin TSOP II package. It operates from 2.2 V to 3.6 V over –40°C to +85°C and provides 45 ns access time. The MoBL® low-power design supports 1.6 mA typical ICC at 1 MHz (13 mA typical at fmax) and 1 µA typical standby (5 µA max) with automatic power-down when deselected and byte enables (BLE/BHE).

Features

  • 2-Mbit SRAM, 128K × 16
  • 45 ns read/write cycle time
  • VCC operating range 2.2 V to 3.6 V
  • Ambient TA −40°C to +85°C
  • 1.6 mA typ ICC at 1 MHz
  • 13 mA typ ICC at fmax
  • 1 µA typ standby current (ISB)
  • 5 µA max standby current (ISB)
  • Auto power-down when deselected
  • BLE/BHE byte enables (8-bit)
  • Data retention at VCC = 1.5 V
  • ICCDR max 4 µA at 1.5 V

Benefits

  • 16-bit bus boosts bandwidth
  • 45 ns access reduces CPU stalls
  • 2.2–3.6 V fits 3 V rails
  • −40 to +85°C handles harsh envs
  • Low active current cuts energy use
  • Low standby extends battery life
  • Auto power-down saves idle power
  • Byte writes reduce update energy
  • High-Z outputs ease bus sharing
  • 1.5 V retention preserves data
  • CE/OE control simplifies expansion
  • Low leakage supports data integrity

Applications

Documents

Design resources

Partner solutions

Developer community

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