Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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CY15E016Q-SXA
END OF LIFE
discontinued
RoHS Compliant
Lead-free

CY15E016Q-SXA

END OF LIFE

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Product details

  • Density
    16 kBit
  • Frequency
    16 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    4.5 V to 5.5 V
  • Operating Voltage range
    4.5 V to 5.5 V
  • Organization (X x Y)
    2Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(A)
  • Speed
    0 ns

OPN
CY15E016Q-SXA
Product Status discontinued
Infineon Package
Package Name SOIC-8 (51-85066)
Packing Size 2425
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US

Product Status discontinued
Infineon Package
Package Name SOIC-8 (51-85066)
Packing Size 2425
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
The CY15E016Q-SXA is a 16-Kbit (2K × 8) automotive-grade serial F-RAM providing nonvolatile memory with high endurance and fast SPI interface. Operating from 4.5 V to 5.5 V across –40°C to +85°C, it delivers 100 trillion (1014) read/write cycles and up to 151-year data retention at 65°C.

Features

  • 16-Kbit nonvolatile F-RAM, 2K × 8
  • 100 trillion (10¹⁴) read/write endurance
  • 151-year data retention at 65°C
  • NoDelay™ writes, bus-speed operation
  • Up to 20 MHz SPI interface
  • Hardware and software write protection
  • Low active current: 250 μA at 1 MHz
  • 4 μA typical standby current
  • Wide VDD: 4.5 V to 5.5 V
  • Operating temp: –40°C to +85°C
  • Supports SPI mode 0 and mode 3
  • Block protection for 1/4, 1/2, or full array

Benefits

  • Reliable data even after power loss
  • No wear-out from frequent writes
  • Eliminates write delays and polling
  • Drop-in replacement for serial flash/EEPROM
  • Fast system performance at 20 MHz
  • Protects critical data from accidental writes
  • Minimizes energy use in active mode
  • Saves power in standby mode
  • Operates in harsh environments
  • Flexible integration with SPI modes
  • Simplifies memory management
  • Reduces BOM by replacing multiple devices

Applications

Documents

Design resources

Developer community