CY15E004Q-SXE
Active and preferred
RoHS Compliant
Lead-free

CY15E004Q-SXE

Datasheet
package
ea.
in stock

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CY15E004Q-SXE
CY15E004Q-SXE
ea.
Datasheet


Product details

  • Density
    4 kBit
  • Frequency
    16 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 125 °C
  • Operating Voltage (VCCQ) range
    4.5 V to 5.5 V
  • Operating Voltage range
    4.5 V to 5.5 V
  • Organization (X x Y)
    0.5Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(E)
  • Speed
    0 ns

Recommended
OPN
CY15E004Q-SXE
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 485
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Est. Longevity Date 2033
Launch Date 03/2022
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 485
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Est. Longevity Date 2033
Launch Date 03/2022
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
ea.
in stock
The CY15E004Q-SXE is a 4-Kbit (512 × 8) automotive-grade serial F-RAM with SPI interface, delivering 10 trillion (10¹³) read/write cycles and 121-year data retention at 85°C. Operating from 4.5 V to 5.5 V with up to 16 MHz SPI clock, it is AEC-Q100 Grade 1 qualified for -40°C to +125°C. NoDelay™ writes, low 300 μA active current, and 10 μA standby at 85°C enable instant, reliable data storage for automotive and industrial systems.

Features

  • 4-Kbit F-RAM, 512 × 8 organization
  • 10^13 read/write cycle endurance
  • 121-year data retention at 85°C
  • NoDelay™ writes, write at bus speed
  • Up to 16 MHz SPI interface
  • Supports SPI mode 0 and 3
  • Hardware and software write protection
  • 300 μA active current at 1 MHz
  • 10 μA standby current at 85°C
  • VDD operation: 4.5 V to 5.5 V
  • -40°C to +125°C operating range
  • Advanced ferroelectric process

Benefits

  • Reliable nonvolatile data storage
  • Eliminates write delays for fast updates
  • Withstands frequent, rapid write cycles
  • Retains data for decades, even at high temp
  • Drop-in replacement for serial flash/EEPROM
  • Low power extends battery/system life
  • Wide voltage and temp range for flexibility
  • Protects data with multiple security options
  • High-speed SPI simplifies integration
  • No wear leveling or refresh needed
  • Robust operation in harsh environments
  • Consistent performance over lifetime

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