not for new design
RoHS Compliant
Lead-free

CY15B256Q-SXAT

ea.
in stock

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CY15B256Q-SXAT
CY15B256Q-SXAT
ea.

Product details

  • Density
    256 kBit
  • Frequency
    40 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2 V to 3.6 V
  • Operating Voltage range
    2 V to 3.6 V
  • Organization (X x Y)
    32Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive
  • Speed
    0 ns
OPN
CY15B256Q-SXAT
Product Status not for new design
Infineon Package
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status not for new design
Infineon Package
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CY15B256Q-SXAT is a 256-Kbit (32K × 8) automotive serial F-RAM with a high-speed SPI interface up to 40 MHz. It delivers 10^14 read/write cycles and 151-year data retention at 65°C, making it ideal for frequent data logging and mission-critical applications. Operating from 2.0 V to 3.6 V and –40°C to +85°C, it features NoDelay™ writes at bus speed, advanced write protection, low power consumption, and is available in an 8-pin SOIC package.

Features

  • 256-Kbit F-RAM organized as 32K × 8
  • 100 trillion (10¹⁴) read/write cycles
  • 151-year data retention at 65°C
  • NoDelay™ writes, writes at bus speed
  • SPI interface up to 40 MHz
  • Supports SPI mode 0 and mode 3
  • Hardware and software write protection
  • Device ID for manufacturer and product
  • 2.5 mA active, 150 μA standby, 8 μA sleep
  • Low-voltage operation: VDD = 2.0 V to 3.6 V
  • Operating temp: –40°C to +85°C
  • Output/input pin capacitance: 8 pF/6 pF

Benefits

  • Enables fast, frequent data logging
  • Eliminates write delays for real-time storage
  • Reliable data retention for 151 years
  • Drop-in replacement for serial flash/EEPROM
  • Reduces system power consumption
  • Flexible operation across voltage range
  • Protects data with multiple security options
  • Simplifies device identification and tracking
  • Operates reliably in harsh environments
  • Supports high-speed SPI communication
  • Minimizes board space with small package
  • Low pin capacitance supports fast signals

Applications

Documents

Design resources

Developer community

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