CY15B256J-SXE
Active and preferred
RoHS Compliant
Lead-free

CY15B256J-SXE

Datasheet
package
ea.
in stock

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CY15B256J-SXE
CY15B256J-SXE
ea.
Datasheet


Product details

  • Density
    256 kBit
  • Frequency
    3.4 MHz
  • Interfaces
    I2C
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 125 °C
  • Operating Voltage (VCCQ) range
    2 V to 3.6 V
  • Operating Voltage range
    2 V to 3.6 V
  • Organization (X x Y)
    32Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(E)
  • Speed
    0 ns

Recommended
OPN
CY15B256J-SXE
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 485
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 485
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
ea.
in stock
The CY15B256J-SXE is a 256-Kbit (32K × 8) automotive-grade serial ferroelectric RAM (F-RAM) with I2C interface, offering nonvolatile storage with 10 trillion (10¹³) read/write cycles and 121-year data retention at 85°C. Operating from 2.0 V to 3.6 V over –40°C to +125°C, it features low active current (500 µA at 100 kHz), 12 µA sleep mode, and fast NoDelay™ writes at bus speed.

Features

  • 256-Kbit nonvolatile F-RAM, 32K × 8
  • I2C serial interface up to 3.4 MHz
  • NoDelay™ writes, RAM-like speed
  • 10^13 read/write cycle endurance
  • 121-year data retention at 85°C
  • Low power: 500 μA active, 12 μA sleep
  • Wide VDD: 2.0 V to 3.6 V
  • Operating temp: –40°C to +125°C
  • Device ID with manufacturer and product info
  • Direct hardware replacement for serial EEPROM

Benefits

  • Enables instant, reliable data storage
  • Supports rapid, frequent data logging
  • Eliminates write delays for real-time systems
  • Outlasts EEPROM in write-intensive uses
  • Retains data for decades without refresh
  • Reduces system power consumption
  • Flexible for various voltage environments
  • Reliable in harsh automotive conditions
  • Simplifies device identification
  • Easy upgrade from legacy EEPROM designs

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