Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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CY15B064Q-SXAT
END OF LIFE
discontinued
RoHS Compliant
Lead-free

CY15B064Q-SXAT

END OF LIFE
Datasheet
package
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CY15B064Q-SXAT
CY15B064Q-SXAT
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Datasheet


Product details

  • Density
    64 kBit
  • Frequency
    16 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    3 V to 3.6 V
  • Operating Voltage (VCCQ) range
    3 V to 3.6 V
  • Organization (X x Y)
    8Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(A)
  • Speed
    0 ns

OPN
CY15B064Q-SXAT
Product Status discontinued
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
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Product Status discontinued
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
View replacement
The CY15B064Q-SXAT is a 64-Kbit (8K × 8) automotive-grade serial F-RAM offering nonvolatile memory with 100 trillion read/write cycles and 151-year data retention at 65°C. Operating from 2.7 V to 3.65 V, it supports SPI up to 20 MHz and NoDelay™ writes. Hardware and software write protection, low power consumption (200 μA active at 1 MHz, 3 μA standby), and an 8-pin SOIC package suit frequent-write, high-reliability automotive and industrial applications.

Features

  • 64-Kbit F-RAM organized as 8K × 8
  • 100 trillion read/write cycle endurance
  • 151-year data retention at 65°C
  • NoDelay™ real-time write operation
  • Up to 20 MHz SPI interface
  • Low power: 200 μA active, 3 μA standby
  • VDD operation: 2.7 V to 3.65 V
  • Multi-tiered hardware/software write
  • Block protection for 1/4, 1/2, or full array
  • Input/output hysteresis for noise immunity
  • -40°C to +85°C operating temperature
  • Direct hardware replacement for serial

Benefits

  • Reliable storage for frequent data logging
  • Eliminates write delays for instant updates
  • Withstands harsh automotive environments
  • Reduces power consumption in standby
  • Protects data with advanced write safeguards
  • Flexible memory protection for critical data
  • Simple integration with standard SPI
  • Long-term data retention reduces maintenance
  • Drop-in replacement simplifies upgrades
  • High endurance lowers total cost of ownership
  • Stable operation in noisy systems
  • Supports wide range of embedded designs
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