Active and preferred
RoHS Compliant
Lead-free

CY15B016J-SXET

Data Sheet
package

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CY15B016J-SXET
CY15B016J-SXET
Data Sheet

Product details

  • Density
    16 kBit
  • Frequency
    3.4 MHz
  • Interfaces
    I2C
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 125 °C
  • Operating Voltage (VCCQ) range
    3 V to 3.6 V
  • Operating Voltage range
    3 V to 3.6 V
  • Organization (X x Y)
    2Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(E)
  • Speed
    0 ns
Recommended
OPN
CY15B016J-SXET
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The CY15B016J-SXET is a 16-Kbit (2K × 8) automotive-grade serial F-RAM memory with 10 trillion (10¹³) read/write endurance and 121-year data retention at 85°C. Operating from 3.0 V to 3.6 V, it supports I2C up to 1 MHz, features 120 μA active current at 100 kHz, and NoDelay™ writes at bus speed. AEC-Q100 Grade 1 qualified for –40°C to +125°C, it is ideal as a drop-in replacement for serial EEPROM in automotive and industrial applications.

Features

  • 16-Kbit ferroelectric RAM organized as 2K × 8
  • 10 trillion read/write cycles endurance
  • 121-year data retention at 85°C
  • NoDelay™ instant write technology
  • Up to 1 MHz I2C serial interface
  • Supports 100 kHz, 400 kHz legacy timings
  • 120 μA max active current at 100 kHz
  • 20 μA standby current at 125°C
  • VDD operation: 3.0 V to 3.6 V
  • –40°C to +125°C operating temperature
  • ESD protection: 2 kV HBM, 500 V CDM
  • Latch-up current >140 mA

Benefits

  • Enables frequent and rapid data logging
  • Reliable data storage for over a century
  • Eliminates write delays for real-time use
  • Drop-in replacement for I2C EEPROM
  • Low power extends battery life
  • Operates reliably in harsh environments
  • Withstands high ESD and latch-up events
  • No data loss from power interruptions
  • Reduces system complexity and cost
  • Supports legacy and new I2C designs
  • Suitable for automotive and industrial use
  • High endurance minimizes maintenance

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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