Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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END OF LIFE
discontinued
RoHS Compliant

CY15B004Q-SXAT

END OF LIFE

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Product details

  • Density
    4 kBit
  • Frequency
    16 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2.7 V to 3.65 V
  • Operating Voltage range
    3 V to 3.6 V
  • Organization (X x Y)
    0.5Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(A)
  • Speed
    0 ns
OPN
CY15B004Q-SXAT
Product Status discontinued
Infineon Package
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:

Product Status discontinued
Infineon Package
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The CY15B004Q-SXAT is a 4-Kbit (512 × 8) automotive-grade serial F-RAM memory, offering nonvolatile storage with virtually unlimited endurance (1014 read/write cycles) and 151-year data retention at 65°C. Operating from 2.7 V to 3.6 V across –40°C to +85°C, it supports high-speed SPI up to 20 MHz in modes 0 and 3. NoDelay™ writes and low active current (200 μA at 1 MHz) make it ideal for frequent-write automotive and industrial applications.

Features

  • 4-Kbit F-RAM organized as 512 × 8
  • 100 trillion read/write cycle endurance
  • 151-year data retention at 65°C
  • NoDelay™ real-time write operation
  • Up to 20 MHz SPI bus interface
  • Low active current: 200 μA at 1 MHz
  • 3 μA typical standby current
  • 2.7 V to 3.6 V supply voltage
  • Multi-tiered hardware/software write
  • Block protection for 1/4, 1/2, or full array
  • Operating temperature: –40°C to +85°C
  • Fast access: 20 ns output data valid time

Benefits

  • Reliable data even after power loss
  • 100 trillion cycles for frequent writes
  • 151-year retention for long-term storage
  • No write delays, instant data storage
  • 20 MHz SPI enables fast data transfer
  • Low power for energy-efficient designs
  • Minimal standby current saves battery
  • Works with standard 3 V systems
  • Robust protection prevents data corruption
  • Flexible block protection for secure storage
  • Operates in harsh environments
  • Fast access improves system response

Applications

Documents

Design resources

Developer community

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