Active and preferred
RoHS Compliant

CY15B004Q-SXET

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CY15B004Q-SXET
CY15B004Q-SXET

Product details

  • Density
    4 kBit
  • Frequency
    16 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 125 °C
  • Operating Voltage (VCCQ) range
    2.7 V to 3.65 V
  • Operating Voltage range
    3 V to 3.6 V
  • Organization (X x Y)
    0.5Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(E)
  • Speed
    0 ns
OPN
CY15B004Q-SXET
Product Status active and preferred
Infineon Package
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The CY15B004Q-SXET is a 4-Kbit (512 × 8) automotive ferroelectric RAM (F-RAM) with 10 trillion (1013) read/write cycles and 121-year data retention at 85°C. Operating from 3.0 V to 3.6 V, it supports SPI speeds up to 16 MHz and offers hardware and software write protection. Low power consumption—200 μA active at 1 MHz and 6 μA standby at 85°C—combined with AEC-Q100 Grade 1 qualification for -40°C to +125°C, makes it ideal for frequent data logging in automotive environments.

Features

  • 4-Kbit nonvolatile F-RAM, 512 × 8
  • 10 trillion (10¹³) read/write endurance
  • 121-year data retention at 85°C
  • NoDelay™ writes, writes at bus speed
  • Up to 16 MHz SPI interface
  • Hardware and software write protection
  • Low power: 200 μA active at 1 MHz
  • 6 μA standby current at 85°C
  • Wide supply voltage: 3.0 V to 3.6 V
  • Operating temp: –40°C to +125°C
  • Direct hardware replacement for serial
  • Supports SPI mode 0 and 3

Benefits

  • Reliable data even after 10¹³ cycles
  • No write delays, instant data storage
  • 121-year retention prevents data loss
  • Fast 16 MHz SPI speeds up transfers
  • Write protection enhances data security
  • 200 μA active saves system power
  • 6 μA standby extends battery life
  • Operates reliably from –40°C to +125°C
  • Easy drop-in for flash/EEPROM designs
  • Flexible SPI mode support simplifies design
  • Wide VDD range eases power supply design
  • High endurance suits frequent-write apps

Documents

Design resources

Developer community

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