CY14B116K-ZS25XIT

Data Sheet

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CY14B116K-ZS25XIT
CY14B116K-ZS25XIT
Data Sheet

Product details

  • Alarms
    Y
  • Density
    16384 kBit
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.7 V to 3.6 V
  • Organization (X x Y)
    2Mb x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Real Time Clock
    Y
  • Speed
    25 ns
  • Watchdog Timer
    Y
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
CY14B116K-ZS25XIT is a 16-Mbit (2048 K × 8) nvSRAM with an integrated real-time clock, combining SRAM speed with nonvolatile QuantumTrap storage. It operates from 2.7 V to 3.6 V over –40°C to +85°C and provides 25 ns access. AutoStore saves data on power-down using a 19.8–82 µF VCAP capacitor; RECALL restores on power-up. Endurance is 1,000,000 STORE cycles with 20-year retention.

Features

  • 16-Mbit nvSRAM (SRAM + NV)
  • 2048K×8 or 1024K×16 array
  • 25 ns / 45 ns access options
  • AutoStore on power-down
  • STORE via software or HSB pin
  • RECALL via power-up or software
  • 1 million STORE cycles
  • 20-year data retention
  • VCC supply 2.7 V to 3.6 V
  • Sleep mode with RTC running
  • 10 µA max sleep mode current
  • RTC alarm, WDT, sq wave out

Benefits

  • SRAM speed with NV data safety
  • Fits x8 or x16 legacy buses
  • 25 ns/45 ns cuts wait states
  • Auto-save prevents data loss
  • STORE on demand for events
  • Fast restore after power-up
  • Endurance supports data logging
  • Long retention cuts maintenance
  • Single 2.7-3.6 V rail eases design
  • Sleep mode reduces system power
  • 10 µA sleep helps battery life
  • RTC blocks reduce external ICs

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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