BSZ0909ND

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BSZ0909ND
BSZ0909ND

Product details

  • Budgetary Price €/1k
    0.4
  • ID (@25°C) max
    20 A
  • IDpuls max
    40 A
  • Mode
    Enhancement
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    Symmetrical Dual 3x3
  • Polarity
    N+N
  • Ptot max
    17 W
  • Qgd
    0.5 nC
  • QG (typ @10V)
    3.7 nC
  • QG (typ @4.5V)
    1.8 nC
  • RDS (on) (@10V) max
    18 mΩ
  • RDS (on) (@4.5V) max
    25 mΩ
  • RDS (on) (@4.5V LL) max
    25 mΩ
  • RthJA max
    180 K/W
  • RthJC max
    7.5 K/W
  • Rth
    7.5 K/W
  • VDS max
    30 V
  • VGS(th)
    1.6 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The used OptiMOS™ technology combined with the PQFN 3x3 package offers an optimized solution for DC-DC applications with space critical requirements. The BSZ0909ND fits perfectly in wireless charging or drives (e.g. multicopter) architectures where designers target to simplify the layout and significantly save space without compromising on efficiency.

Features

  • Ultra-low Q g
  • Symmetric half bridge in a small 3.0x3.0mm² package outline
  • Exposed pads
  • Logic level (4.5V rated)
  • RoHS compliant 6/6 (full lead free)

Benefits

  • Low switching losses
  • High switching frequency operation
  • Lowest parasitics
  • Low operating temperature
  • Low gate drive losses
  • RoHS 6/6 lead free product 

Applications

Documents

Design resources

Developer community

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