Active and preferred
RoHS Compliant

BSZ070N08LS5

OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package
ea.
in stock

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BSZ070N08LS5
BSZ070N08LS5
ea.

Product details

  • Budgetary Price €/1k
    0.43
  • Ciss
    1800 pF
  • Coss
    280 pF
  • ID (@25°C) max
    40 A
  • IDpuls max
    160 A
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    PQFN 3.3 x 3.3
  • Pin Count
    8 Pins
  • Polarity
    N
  • Ptot max
    69 W
  • Qgd
    5 nC
  • QG (typ @4.5V)
    14.1 nC
  • RDS (on) (@4.5V) max
    9.4 mΩ
  • RDS (on) (@4.5V LL) max
    9.4 mΩ
  • RDS (on) (@10V) max
    7 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    1.8 K/W
  • Rth max
    1.8 K/W
  • VDS max
    80 V
  • VGS(th)
    1.7 V
OPN
BSZ070N08LS5ATMA1
Product Status active and preferred
Infineon Package
Package Name PQFN 3x3
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name PQFN 3x3
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Features

  • Low R DS(on) in small package
  • Low gate charge
  • Lower output charge
  • Logic level compatibility

Benefits

  • Higher power density designs
  • Higher switching frequency
  • Reduced parts count
  • Driven directly from microcontrollers
  • System cost reduction

Documents

Design resources

Developer community

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