not for new design
RoHS Compliant

BSC019N08NS5

OptiMOS™ 5 power MOSFET 80V best-in-class in SuperSO8
Data Sheet
package
ea.
in stock

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BSC019N08NS5
BSC019N08NS5
ea.
Data Sheet

Product details

  • Battery voltage
    36-48 V
  • Budgetary Price €/1k
    1.8
  • ID (@25°C) max
    237 A
  • IDpuls max
    948 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    SuperSO8 5x6
  • Polarity
    N
  • Ptot max
    214 W
  • QG (typ @10V)
    94 nC
  • RDS (on) (@10V) max
    1.9 mΩ
  • VDS max
    80 V
  • VGS(th)
    3 V
OPN
BSC019N08NS5ATMA1
Product Status not for new design
Infineon Package
PG-TSON-8
Package Name SuperSO8 FL
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status not for new design
Infineon Package
PG-TSON-8
Package Name SuperSO8 FL
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
This OptiMOS™ 5 MOSFET in SuperSO8 enables high power density and improved robustness, responding to the need for lower system cost and increased performance. This product is specially designed for synchronous rectification for telecom and server power supplies. Low reverse-recovery charge (Qrr) improves the system reliability by reducing the voltage overshoot, minimizing the need for snubber circuits, resulting in cost savings.

Features

  • Lowest RDS(on) enables highest power density and efficiency
  • Higher operating temperature rating to 175° C for increased reliability
  • Low RthJC for excellent thermal behavior
  • Lower reverse recovery charge (Qrr)

Benefits

  • Lower full load temperature
  • Less paralleling
  • Reduced overshoot
  • Increased system power density
  • Smaller size
  • System cost reduction
  • Engineering costs and effort reduction

Documents

Documents

Design resources

Partner solutions

Developer community

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