Active and preferred
RoHS Compliant
Lead-free

BGAP2D20A

ea.
in stock

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BGAP2D20A
BGAP2D20A
ea.

Product details

  • ACLR
    -47.8 dBc
  • Frequency Range
    2.3 GHz to 2.7 GHz
  • Gain Flatness max
    0.16 dB
  • Gain
    35.1 dB
  • Noise Figure
    3.4 dB
  • OIP3
    34.3 dBm
  • OP1dB
    28.9 dBm
  • Supply Voltage
    5 V
OPN
BGAP2D20AE6327XTSA1
Product Status active and preferred
Infineon Package
Package Name N/A
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name -
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The BGA P2D20A is a 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 28.9 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input is 100Ω differential, the output is 50Ω single-ended. The driver amplifier boasts high linearity and an excellent wide-band gain flatness of <0.2 dB for optimum linearization results of the driven PA.  

Features

  • Supply voltage: 5V
  • Gain Flatness: 0.16 dB
  • High Gain: 35.1 dB
  • High OP1dB: 28.9 dBm
  • Low-band: 2.3 - 2.7GHz
  • Packaging: TSNP-16

Benefits

  • BiCMOS technology for an optimized performance
  • High gain and high power for fewer components in line-up
  • Wide BW 2.3-2.7 GHz with best gain flatness
  • Internal Matching saving external matching components
  • Easy design-in and small area  footprint

Applications

Diagrams

Diagram_BGAP2D20A
Diagram_BGAP2D20A
Diagram_BGAP2D20A Diagram_BGAP2D20A Diagram_BGAP2D20A

Documents

Design resources

Developer community

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