Active and preferred
RoHS Compliant
Lead-free

BGA9C1MN9

Data Sheet
package

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BGA9C1MN9
BGA9C1MN9
Data Sheet

Product details

  • Frequency
    4400 - 5000 MHz
  • Gain
    19 dB
  • ICC
    5.6 mA
  • IIP3
    -1 dBm
  • IP1dB
    -14 dBm
  • NF
    1 dB
  • P-1dB
    -14 dBm
  • Size
    1.1 x 1.1 mm²
  • VCC operating
    1.1 - 2.0 V
Recommended
OPN
BGA9C1MN9E6327XTSA1
Product Status active and preferred
Infineon Package
PG-TSNP-9
Package Name N/A
Packing Size 12000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TSNP-9
Package Name -
Packing Size 12000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The BGA9C1MN9 is a low noise amplifier for LTE and 5G which covers a wide frequency range from 4.4 GHz to 5.0 GHz. The LNA provides up to 19.0 dB gain and 0.9 dB noise figure at a current consumption of 5.6 mA in the application configuration described in Chapter 7. With the Gain Step feature the gain and linearity can be adjusted to increase the system dynamic range and to accommodate to changing interference scenarios. The BGA9C1MN9 supports ultra-low bypass current of 2 µA and 1.2 V operating voltage to reduce power consumption. It operates from 1.1 V to 2.0 V supply voltage over temperature. The compact9 pin TSNP-9 package with the dimension of 1.1 x 1.1 mm helps to save space on the PCB.

Features

  • Power gain: 19.0 dB
  • Low noise figure: 0.9 dB
  • Low current consumption: 5.6 mA
  • Frequency range from 4.4 to 5.0 GHz
  • Supply voltage: 1.1 to 2.0 V
  • Integrated MIPI RFFE interface operating in 1.65 to 1.95 V voltage range
  • Software programmable MIPI RFFE USID
  • USID select pin
  • Small form factor 1.1 mm x 1.1 mm
  • High EMI robustness
  • RoHS and WEEE compliant package

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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