Active and preferred
RoHS Compliant
Lead-free

BGA7P220

BGA7P220 driver amplifier
ea.
in stock

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BGA7P220
BGA7P220
ea.

Product details

  • ACLR
    45 dBc
  • Frequency Range
    2.3 GHz to 2.7 GHz
  • Gain Flatness
    0.5 dB
  • Gain
    34.4 dB
  • Noise Figure
    3.5 dB
  • OIP3
    32.2 dBm
  • OP1dB
    27.5 dBm
  • Package Size (mm²)
    3.0 x 3.0
  • Supply Voltage
    3.3 V
OPN
BGA7P220E6327XTSA1
Product Status active and preferred
Infineon Package
Package Name N/A
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name -
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The BGA7P220 is a 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 27.5 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The driver amplifier boasts high linearity and an excellent wide-band gain flatness of <0.5 dB for optimum linearization results of the driven PA.   

Features

  • Supply voltage: 3.3 V
  • Gain flatness: <0.5 dB
  • High gain: 34.4 dB
  • High OP1dB: 27.5 dBm
  • Low-band: 2.3-2.7 GHz
  • Packaging: TSNP-16-12

Benefits

  • Internal matching: No external matching components
  • High gain and high power: 27.5 dBm OP1dB and 34.4 dB gain
  • Excellent linearity with -45 dBc ACLR  
  • Wide BW covers 2.3-2.7 GHz
  • Differential input saves an external balun

Applications

Diagrams

Diagram_BGA7P220
Diagram_BGA7P220
Diagram_BGA7P220 Diagram_BGA7P220 Diagram_BGA7P220

Documents

Design resources

Developer community

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