Active and preferred
RoHS Compliant
Lead-free

BFP650

Data Sheet
package
ea.
in stock

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BFP650
BFP650
ea.
Data Sheet

Product details

  • Gmax
    26.50 dB @900 MHz
  • IC max
    150 mA
  • NFmin
    0.80 dB @900 MHz
  • OIP3
    31 dBm @900 MHz
  • OP1dB
    17 dBm @900 MHz
  • Package
    SOT343
  • VCEO max
    4 V
Recommended
OPN
BFP650H6327XTSA1
Product Status active and preferred
Infineon Package
SOT343
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
SOT343
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
High Linearity Low Noise SiGe:C NPN RF Transistor

Features

  • Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz
  • Output compression point OP1dB = 17 dBm at 70 mA, 3V, 2.4 GHz, 50Ω system
  • Output 3rd order intermodulation point OIP3 = 30 dBm at 70 mA, 3 V, 2.4 GHz, 50 Ω system
  • Maximum available gain Gma = 17.5 dB at 70 mA, 3V, 2.4 GHz
  • Minimum noise figure NFmin = 1 dB at 30 mA, 3V, 2.4 GHz
  • Based on Infineon´s reliable, high volume SiGe:C wafer technology
  • Easy to use Pb-free (RoHS compliant) standard package with visible leads

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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