Please note that this is an end of life product. Explore the product family for available alternatives. Please note that this is an end of life product. Explore the product family for available alternatives.
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1EDS5663H
END OF LIFE
discontinued
RoHS Compliant
Lead-free

1EDS5663H

END OF LIFE
GaN EiceDRIVER™ gate driver IC with excellent robustness and efficiency, the perfect fit to drive gallium nitride (GaN) HEMTs
Datasheet
package
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1EDS5663H
1EDS5663H
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Datasheet


Product details

  • Channels
    1
  • Configuration
    High-side
  • Input Vcc min
    3 V
  • Isolation Type
    Galvanic isolation - Reinforced
  • Output Current (Sink)
    8 A
  • Output Current (Source)
    4 A
  • Package
    PG-DSO-16
  • Qualification
    Industrial
  • Turn Off Propagation Delay
    41 ns
  • Turn On Propagation Delay
    37 ns
  • VBS UVLO (On)
    5.8 V
  • VBS UVLO (Off)
    5.2 V
  • VCC UVLO (On)
    2.85 V
  • VCC UVLO (Off)
    2.7 V
  • Voltage Class
    650 V

OPN
1EDS5663HXUMA1
Product Status discontinued
Infineon Package
PG-DSO-16
Package Name N/A
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
ID
Country of Diffusion (CoD)
DE
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Product Status discontinued
Infineon Package
PG-DSO-16
Package Name -
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
ID
Country of Diffusion (CoD)
DE
View product family
The new single-channel galvanically isolated gate driver IC component 1EDS5663H is a perfect fit for enhancement mode (e-mode) gallium nitride (GaN) HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage, such as CoolGaN™ . It ensures robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.
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