800 V CoolMOS™ P7

A benchmark in efficiency and thermal performance

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Overview

With the 800 V CoolMOS™ P7 series, Infineon sets a benchmark in 800 V superjunction technologies and combines best-in-class performance with state-of-the-art ease of use. Robust gate module, body diode, and fast and clean switching are the features that make the product family a perfect fit for flyback-based consumer SMPS applications. It is also suitable for consumer PFC stages, solar, adapter, audio, lighting applications.

Key Features

  • High voltage 800 V
  • Zener diode protected gate
  • Clean fast commutation
  • Robust body diode

Products

About

800 V CoolMOS™ exceptional EMI performance

EMI is a system-level topic, and the optimization needs to be done at the system level. Nevertheless, a pure plug-and-play measurement at an Infineon 45 W adapter reveals that 800 V CoolMOS™ P7 shows similar EMI performance compared to Infineon’s previous technologies but also when compared to competitors’ technologies.

Compared  to competition, the 800 V CoolMOS™ P7 technology allows integrating much lower RDS(on) values into small packages, such as a DPAK. This enables high power density designs at highly competitive price levels.

Benefits of 800 V CoolMOS™ P7™

The technology offers fully optimized key parameters to deliver best-in-class efficiency as well as thermal performance. As demonstrated at an 80 W LED driver bought on the market, the >45 percent reduction in Eoss and Coss as well as the significant improvement in Ciss and QG compared to competitor technologies, lead to 0.5 percent higher efficiency at light load which helps to reduce standby power at the end application. At full load, the observed improvement is up to 0.3 percent higher efficiency and 6°C lower device temperature.

Benefits of 800 V CoolMOS™ P7

This product family continues to deliver well recognized best-in-class CoolMOS™ quality. In addition, CoolMOS™ P7 offers a new best-in-class RDS(on): in DPAK, a RDS(on) of 280 mΩ is available, more than 50 percent lower than the nearest 800 V MOSFET competitor. This new benchmark enables higher power density designs, Bill of Materials (BOM) savings, as well as lower assembly cost.

800 V CoolMOS™ exceptional EMI performance

EMI is a system-level topic, and the optimization needs to be done at the system level. Nevertheless, a pure plug-and-play measurement at an Infineon 45 W adapter reveals that 800 V CoolMOS™ P7 shows similar EMI performance compared to Infineon’s previous technologies but also when compared to competitors’ technologies.

Compared  to competition, the 800 V CoolMOS™ P7 technology allows integrating much lower RDS(on) values into small packages, such as a DPAK. This enables high power density designs at highly competitive price levels.

Benefits of 800 V CoolMOS™ P7™

The technology offers fully optimized key parameters to deliver best-in-class efficiency as well as thermal performance. As demonstrated at an 80 W LED driver bought on the market, the >45 percent reduction in Eoss and Coss as well as the significant improvement in Ciss and QG compared to competitor technologies, lead to 0.5 percent higher efficiency at light load which helps to reduce standby power at the end application. At full load, the observed improvement is up to 0.3 percent higher efficiency and 6°C lower device temperature.

Benefits of 800 V CoolMOS™ P7

This product family continues to deliver well recognized best-in-class CoolMOS™ quality. In addition, CoolMOS™ P7 offers a new best-in-class RDS(on): in DPAK, a RDS(on) of 280 mΩ is available, more than 50 percent lower than the nearest 800 V MOSFET competitor. This new benchmark enables higher power density designs, Bill of Materials (BOM) savings, as well as lower assembly cost.

Documents

Design resources

Developer community