Gate driver ICs for GaN HEMTs up to 200 V

Recommended EiceDRIVER™ gate driver ICs for GaN HEMTs up to 200 V

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Overview

Wide-bandgap semiconductors allow higher electric field strengths and thus result in significantly smaller transistors compared to silicon alternatives. Consequently, GaN high electron mobility transistors (HEMTs) can operate at high switching frequencies without compromising efficiency. Many enhancement-mode GaN HEMTs use a Schottky-type gate to emulate a typical insulated MOSFET gate.

Key Features

  • Fast turn-on and turn-off slew rate
  • Low-inductance packages
  • Robust CMR at high dV/dt
  • Active Miller clamping
  • Induced turn-on immunity
  • Regulated bootstrap voltage

Products

About

Benefits of Infineon CoolGaN™ SG HEMT and EiceDRIVER™ gate driver ICs

GaN Schottky Gate (SG) HEMTs can be driven by any gate driver compatible with the required driving voltage, typically 5 V.

However, there are several key features that enable the highest level of performance from the switch, including:

  • fast turn-on and turn-off slew rates in source and sink driving currents, along with low pull-up and pull-down resistance
  • low-inductance packages with footprints and pin-outs compatible with an optimized GaN PCB layout
  • robust common-mode voltage rejection at high dV/dt to support the fastest switching and lowest switching loss
  • features to mitigate induced turn-on during high dV/dt, such as active Miller clamping and negative off-state driving voltage
  • tight tolerances on propagation delays, enabling short dead-times

High-efficiency and high-power density are key requirements for modern power electronics systems, which are enabled by state-of-the-art GaN HEMTs. The right gate driver IC can help designers to achieve the best performance in their GaN-based systems, while simultaneously minimizing R&D efforts and associated costs.

Dual-channel EiceDRIVER™ 2EDL50X3U2D gate driver product portfolio

The 2EDL50X3U2D is a 120 V, 3 A, dual-channel gate-driver IC optimized for driving Infineon's CoolGaN™ Schottky gate (SG) HEMTs, as well as other GaN SG HEMTs and Si MOSFETs.

The 2EDL50X3U2D is a half-bridge gate driver designed to drive both the high-side and the low-side switch in a synchronous buck or half-bridge configuration. This gate driver family includes several key features such as integrated bootstrap switch, active bootstrap clamping, split output for adjustable turn-on / turn-off driving strength, built in active miller clamp, and fast propagation delay and delay matching. 2EDL50X3U2D in 2 mm x 2 mm TSNP 12 pin package.

Single-channel EiceDRIVER™ 1EDN71x6Gx gate driver product portfolio

The 1EDN71x6Gx is a single-channel gate-driver IC product family optimized for driving Infineon's CoolGaN™ Schottky gate (SG) HEMTs, as well as other GaN SG HEMTs and Si MOSFETs.

This gate driver includes several key features that enable a high-performance system design with fast-switching transistors, including truly differential input (TDI), four driving strength options, active Miller clamp, bootstrap voltage clamp, and with or without adjustable charge pump in PG-SON-10 and PG-TSNP-7 package respectively.

Learn more about our EiceDRIVER™ 1EDN71x6x family
Benefits of Infineon CoolGaN™ SG HEMT and EiceDRIVER™ gate driver ICs

GaN Schottky Gate (SG) HEMTs can be driven by any gate driver compatible with the required driving voltage, typically 5 V.

However, there are several key features that enable the highest level of performance from the switch, including:

  • fast turn-on and turn-off slew rates in source and sink driving currents, along with low pull-up and pull-down resistance
  • low-inductance packages with footprints and pin-outs compatible with an optimized GaN PCB layout
  • robust common-mode voltage rejection at high dV/dt to support the fastest switching and lowest switching loss
  • features to mitigate induced turn-on during high dV/dt, such as active Miller clamping and negative off-state driving voltage
  • tight tolerances on propagation delays, enabling short dead-times

High-efficiency and high-power density are key requirements for modern power electronics systems, which are enabled by state-of-the-art GaN HEMTs. The right gate driver IC can help designers to achieve the best performance in their GaN-based systems, while simultaneously minimizing R&D efforts and associated costs.

Dual-channel EiceDRIVER™ 2EDL50X3U2D gate driver product portfolio

The 2EDL50X3U2D is a 120 V, 3 A, dual-channel gate-driver IC optimized for driving Infineon's CoolGaN™ Schottky gate (SG) HEMTs, as well as other GaN SG HEMTs and Si MOSFETs.

The 2EDL50X3U2D is a half-bridge gate driver designed to drive both the high-side and the low-side switch in a synchronous buck or half-bridge configuration. This gate driver family includes several key features such as integrated bootstrap switch, active bootstrap clamping, split output for adjustable turn-on / turn-off driving strength, built in active miller clamp, and fast propagation delay and delay matching. 2EDL50X3U2D in 2 mm x 2 mm TSNP 12 pin package.

Single-channel EiceDRIVER™ 1EDN71x6Gx gate driver product portfolio

The 1EDN71x6Gx is a single-channel gate-driver IC product family optimized for driving Infineon's CoolGaN™ Schottky gate (SG) HEMTs, as well as other GaN SG HEMTs and Si MOSFETs.

This gate driver includes several key features that enable a high-performance system design with fast-switching transistors, including truly differential input (TDI), four driving strength options, active Miller clamp, bootstrap voltage clamp, and with or without adjustable charge pump in PG-SON-10 and PG-TSNP-7 package respectively.

Learn more about our EiceDRIVER™ 1EDN71x6x family

Design resources

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community ", "labelEn" : "Ask the community " }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions ", "labelEn" : "View all discussions " } ] }