1ED3830MU12M

Overview

5.7 kV, 3 A single-channel highly flexible isolated gate driver with I2C configurability for DESAT, Soft-Off, UVLO, Miller clamp, TLTO and Fault. UL1577 certified

EiceDRIVER™ Enhanced single-channel highly flexible isolated gate driver with ±3 A typical sinking and sourcing peak output current in small space-saving DSO-16 fine pitch wide-body package with large creepage distance (>8 mm) for IGBTs, MOSFETs and SiC MOSFETs.

1ED3830MU12M belongs to the EiceDRIVER™ Enhanced 1ED38xx family (X3 digital family). 1ED3830 offers adjustable control and protection functions including DESAT, Soft-Off, UVLO, Miller clamp, two level turn off (TLTO), and Fault, to simplify the design of highly reliable systems. All parameter adjustments are done from the input side via the I2C interface (pin SDA and SCL). 

1ED3431xx Analog version available, with active Miller clamp, adjustable DESAT and Soft-off

Summary of Features

  • Highly flexible EiceDRIVER™ Enhanced single channel isolated gate driver 1ED38xx family (X3 digital family)
  • For use with 650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
  • 2300 V functional offset voltage capable for selected applications
  • ±3 A typical sinking and sourcing peak output current
  • 40 V absolute maximum output supply voltage
  • Separate source and sink outputs with two-level turn-off
  • Active Miller clamp
  • Precise and temperature compensated VCEsat detection (DESAT) with fault output
  • IGBT soft turn-off after desaturation detection
  • FLT and RDY status signaling to µController
  • Parameter adjustment from input side via I2C bus:
  • Undervoltage lockout (UVLO)
  • Active Miller clamp
  • DESAT protection
  • Soft turn off
  • Two level turn off
  • Over temperature shutdown

Benefits

  • Over-temperature shut down at 160 °C (±10 °C)
  • Tight IC-to-IC propagation delay matching (30 ns max.)
  • High common-mode transient immunity CMTI >100 kV/μs
  • Suitable for operation at high ambient temperature up to 125 °C
  • Small space-saving DSO-16 fine pitch wide-body package with large creepage distance (>8 mm)
  • UL 1577 VISO = 6.84 kV (rms) for 1 s, 5.7 kV (rms) for 1 min

Find our Variations for EiceDRIVER™ Enhanced 1ED38xx family (X3 digital family)

Part No Typ. current CLAMP Type Isolation Certification

1ED3830MU12M

 ±3 A CLAMP UL 1577

1ED3860MU12M

 ±6 A CLAMP Driver UL 1577

1ED3890MU12M

 ±9 A CLAMP Driver UL 1577
Diagrams
Videos

An Introduction to Infineon Gate Drivers

Do you want to know more about Infineon´s gate drivers? Watch our introduction video and become familiar with our product portfolio.

Galvanic isolated Gate Drivers with Protection Features

EiceDRIVER™ galvanically isolated gate drivers use the unique coreless transformer (CT) technology to provide signal transfer across the galvanic isolation. We offer short circuit protection, 100 kV/μs CMTI, active Miller clamp, soft turn off and other features, especially for driving SiC MOSFETs and GaN HEMTs.

Training

EiceDRIVER™ X3 Enhanced Family: 1ED38xx

  • The EiceDRIVER™ Enhanced X3 Analog family (1ED34xx), with DESAT (adjustable filter time), Miller Clamp, soft-off (adjustable current)
  • Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc

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  • EiceDRIVER™ Enhanced now include 1ED38XX (X3 Digital), with I2C configurability for DESAT, Soft-Off, UVLO, Miller clamp, TLTO and Fault
  • Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
  • Perfect for CoolSiC™ SiC MOSFET. VDE 0884-11 & UL 1577 (planned). For solar, EV charging, industrial drive, UPS, etc

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You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.

For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.

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With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

  • EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
  • The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.

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