CoolMOS™ C7

600 V and 650 V CoolMOS™ C7 and C7 Gold (G7) superjunction (SJ) MOSFETs - Infineon’s highest efficiency superjunction MOSFET series

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CoolMOS™ 600 V and 650 V C7 superjunction MOSFETs

The 600 V and 650 V CoolMOS™ C7 and C7 Gold (G7) superjunction (SJ) MOSFET series are designed to achieve record level efficiency performance – they offer substantial efficiency benefits over the whole load range in hard switching applications compared to previous series and competition.

This is achieved by minimizing switching losses via ultra-low levels of Eoss (approximately 50% reduction compared to the CoolMOS™ CP), reduced QG and a careful balance of other relevant product key parameters. The low Eoss and QG also enable operation at higher switching frequency and related size-reduction of the circuit magnetics.

Discover the CoolMOS™ C7 & C7 Gold (G7) product portfolio

The CoolMOS™ C7 & C7 Gold (G7) product portfolio is geared towards higher power performance-driven applications. The range of RDS(on) is rather continuous and is placed between 19 mΩ to 230 mΩ. The packaging options are offered  in both high-power THT and advanced SMD.

Latest CoolMOS™ technology with benchmark efficiency performance

The 600 V CoolMOS™ C7  from Infineon offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF, and other hard switching topologies. Efficiency and total cost-of-ownership (TCO) driven applications benefit from the higher efficiency offered by CoolMOS™ C7. Efficiency gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved, representing energy cost reductions of ~10%. 

BOM cost driven applications can use the efficiency gained at full load by the combination of C7 and TO-247 pin package. This is done by increasing the RDS(on) of the MOSFET so that it matches previous 3-pin package full load efficiency enabling benefits in costs (i.e. 40 mΩ vs 70 mΩ device). Doubling the switching frequency can also save magnetic component material. Cost savings of up to 30% in copper windings and 45% in core (dependent on material) can be achieved. 

650 V was chosen to give extra safety margin for designers and make it suitable for both SMPS and Solar inverters. Finally, the new CoolMOS™ C7 series benefits from the 12 years manufacturing experience and continues to offer Infineon’s outstanding quality.

CoolMOS™ 600 V and 650 V C7 superjunction MOSFETs

The 600 V and 650 V CoolMOS™ C7 and C7 Gold (G7) superjunction (SJ) MOSFET series are designed to achieve record level efficiency performance – they offer substantial efficiency benefits over the whole load range in hard switching applications compared to previous series and competition.

This is achieved by minimizing switching losses via ultra-low levels of Eoss (approximately 50% reduction compared to the CoolMOS™ CP), reduced QG and a careful balance of other relevant product key parameters. The low Eoss and QG also enable operation at higher switching frequency and related size-reduction of the circuit magnetics.

Discover the CoolMOS™ C7 & C7 Gold (G7) product portfolio

The CoolMOS™ C7 & C7 Gold (G7) product portfolio is geared towards higher power performance-driven applications. The range of RDS(on) is rather continuous and is placed between 19 mΩ to 230 mΩ. The packaging options are offered  in both high-power THT and advanced SMD.

Latest CoolMOS™ technology with benchmark efficiency performance

The 600 V CoolMOS™ C7  from Infineon offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF, and other hard switching topologies. Efficiency and total cost-of-ownership (TCO) driven applications benefit from the higher efficiency offered by CoolMOS™ C7. Efficiency gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved, representing energy cost reductions of ~10%. 

BOM cost driven applications can use the efficiency gained at full load by the combination of C7 and TO-247 pin package. This is done by increasing the RDS(on) of the MOSFET so that it matches previous 3-pin package full load efficiency enabling benefits in costs (i.e. 40 mΩ vs 70 mΩ device). Doubling the switching frequency can also save magnetic component material. Cost savings of up to 30% in copper windings and 45% in core (dependent on material) can be achieved. 

650 V was chosen to give extra safety margin for designers and make it suitable for both SMPS and Solar inverters. Finally, the new CoolMOS™ C7 series benefits from the 12 years manufacturing experience and continues to offer Infineon’s outstanding quality.

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