650 V CoolMOS™ CFD7

CoolMOS™ superjunction high-voltage MOSFET - tailored to address high-efficient soft-switching topologies in industrial applications

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Overview

The 650 V CoolMOS™ superjunction MOSFET CFD7 family is the voltage-range extension of Infineon’s renowned CoolMOS™ SJ MOSFET CFD7 family, the successor to the well-established CoolMOS™ SJ MOSFET CFD2. It allows for the highest efficiency and power-density levels in soft-switching applications, enabled by an additional 50 V breakdown voltage, an integrated fast body diode, improved switching performance, and excellent thermal behavior.

Key Features

  • 650 V breakdown voltage
  • Ultrafast body diode & very low Qrr
  • Lowest RDS(on) temperature change
  • Greatly reduced switching losses

Products

About

  • Reliable operation through excellent hard-commutation ruggedness
  • extra safety margin for designs with increased bus voltage
  • Fastest switching for elevated switching frequencies to enable increased converter power density
  • Outstanding efficiency in industrial SMPS applications over the full load range
  • Price competitiveness compared to alternative offerings in the market

 

The CFD7 body diode has been further optimized (compared to the preceding family CFD2) with 50% reduction in Qrr , 40% in Trr, and 20% in Irrm - leading to measurable turn-on loss decrease. For fast-commutated devices, the turn-off losses have been reduced to more than 50% - contributing to a flatter efficiency curve over the full load-range. Additional loss decrease is achieved by lower sensitivity of the RDS(on) resistance for elevated temperatures - relevant to operating at full load.

For example, in an EV charging application, CFD7 runs 2-5 degrees cooler than what we see for CFD2 or with the closest device available on the market, further assisted when using Kelvin source packages. In a 3 kW server power supply using CFD7 reduces the losses by 10% (attributable to the device alone) - permitting notable long-term energy savings.

CFD7 portfolio offers the most advanced superjunction 650 V MOSFETs in an on-state resistances ranging from 17 to 190 mΩ with high granularity. Three through-hole packages are on offer (including Kelvin-source TO247) and three surface-mount low-profile packages such as Thin-PAK 8x8. The portfolio is completed by the popular top-side cooled Q-DPAK for high-power applications.

  • Reliable operation through excellent hard-commutation ruggedness
  • extra safety margin for designs with increased bus voltage
  • Fastest switching for elevated switching frequencies to enable increased converter power density
  • Outstanding efficiency in industrial SMPS applications over the full load range
  • Price competitiveness compared to alternative offerings in the market

 

The CFD7 body diode has been further optimized (compared to the preceding family CFD2) with 50% reduction in Qrr , 40% in Trr, and 20% in Irrm - leading to measurable turn-on loss decrease. For fast-commutated devices, the turn-off losses have been reduced to more than 50% - contributing to a flatter efficiency curve over the full load-range. Additional loss decrease is achieved by lower sensitivity of the RDS(on) resistance for elevated temperatures - relevant to operating at full load.

For example, in an EV charging application, CFD7 runs 2-5 degrees cooler than what we see for CFD2 or with the closest device available on the market, further assisted when using Kelvin source packages. In a 3 kW server power supply using CFD7 reduces the losses by 10% (attributable to the device alone) - permitting notable long-term energy savings.

CFD7 portfolio offers the most advanced superjunction 650 V MOSFETs in an on-state resistances ranging from 17 to 190 mΩ with high granularity. Three through-hole packages are on offer (including Kelvin-source TO247) and three surface-mount low-profile packages such as Thin-PAK 8x8. The portfolio is completed by the popular top-side cooled Q-DPAK for high-power applications.

Documents

Design resources

Developer community

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