SPP11N65C3

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SPP11N65C3
SPP11N65C3

Product details

  • ID (@25°C) max
    11 A
  • ID max
    11 A
  • IDpuls max
    33 A
  • Mode
    Enhancement
  • Mounting
    THT
  • Operating Temperature min
    -55 °C
  • Package
    TO-220
  • Polarity
    N
  • Ptot max
    125 W
  • QG
    45 nC
  • QG (typ @10V)
    45 nC
  • RDS (on) max
    400 mΩ
  • RDS (on) (@10V) max
    400 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    1 K/W
  • Rth
    1 K/W
  • VDS max
    650 V
  • VGS(th)
    2.1 V to 3.9 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
650V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. Replacement for 650V CoolMOS™ C3 is CoolMOS™ P7 .

Features

  • Low specific on-state resistance (RDS(on)*A)
  • Very low energy storage in output capacitance (Eoss) @400V
  • Low gate charge (Qg)
  • Fieldproven CoolMOS™ quality
  • CoolMOS™ technology has been manufactured by Infineon since 1998

Benefits

  • High efficiency and power density
  • Outstanding cost/performance
  • High reliability
  • Ease-of-use

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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