Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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END OF LIFE
discontinued
RoHS Compliant

S29GL256P11FFI020

END OF LIFE
Data Sheet
package
software
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S29GL256P11FFI020
S29GL256P11FFI020
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Data Sheet

Product details

  • Density
    256 MBit
  • Family
    GL-P
  • Initial Access Time
    110 ns
  • Interface Frequency (SDR/DDR) (MHz)
    NA
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage
    3 V
  • Page Access Time
    25 ns
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
OPN
S29GL256P11FFI020
Product Status discontinued
Infineon Package
PG-LFBGA-64
Package Name FBGA-64 (002-15536)
Packing Size 1800
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
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Product Status discontinued
Infineon Package
PG-LFBGA-64
Package Name FBGA-64 (002-15536)
Packing Size 1800
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S29GL256P11FFI020 is a 256 Mbit, 3.0 V page-mode Flash memory using 90 nm MirrorBit technology, with uniform 64 Kword (128 Kbyte) sectors and VersatileIO for I/O operation from 1.65 V to VCC. It supports single word or 32-word buffer programming, advanced sector protection, and a secured silicon sector for permanent data. With fast access times down to 100/110 ns, 100,000 erase cycles per sector, and 1 µA standby current, it is ideal for reliable embedded systems.

Features

  • 90 nm MirrorBit process technology
  • Single 3 V read/program/erase operation
  • VersatileIO control (1.65 V to VCC I/O)
  • 32-word/64-byte write buffer
  • 8-word/16-byte page read buffer
  • Uniform 64 Kword/128 Kbyte sectors
  • 128-word/256-byte Secured Silicon Sector
  • Advanced sector protection methods
  • Program/Erase Suspend and Resume
  • Hardware data protection (WP#/ACC, VCC)
  • Write pulse glitch protection
  • 100,000 erase cycles per sector (typical)

Benefits

  • High density for embedded storage needs
  • Low voltage reduces power consumption
  • Flexible I/O for easy system integration
  • Fast programming with write buffer
  • Page read buffer speeds up data access
  • Simplifies memory management
  • Secure area for permanent IDs
  • Protects data from accidental changes
  • Suspend/resume boosts system efficiency
  • Hardware protection prevents data loss
  • Glitch protection ensures data integrity
  • High endurance for long device life

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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