Active and preferred
RoHS Compliant
Lead-free

S29GL01GT12TFN010

Data Sheet
package
software
ea.
in stock

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S29GL01GT12TFN010
S29GL01GT12TFN010
ea.
Data Sheet

Product details

  • Density
    1 GBit
  • Family
    GL-T
  • Initial Access Time
    120 ns
  • Interface Frequency (SDR/DDR) (MHz)
    NA
  • Interfaces
    Parallel
  • Lead Ball Finish
    Matte Tin Plating
  • Operating Temperature
    -40 °C to 125 °C
  • Operating Voltage
    3 V
  • Page Access Time
    15 ns
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Industrial
Recommended
OPN
S29GL01GT12TFN010
Product Status active and preferred
Infineon Package
PG-TSOP-56
Package Name TSOP-56 (002-15549)
Packing Size 182
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSOP-56
Package Name TSOP-56 (002-15549)
Packing Size 182
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The S29GL01GT12TFN010 is a 1 Gb (128 MB) parallel NOR flash memory using 45-nm MIRRORBIT™ technology, operating from a single 2.7 V to 3.6 V supply with I/O voltage range of 1.65 V to VCC. It features ×8/×16 data bus, page access as low as 15 ns, random access down to 100 ns, a 512-byte programming buffer, hardware ECC, and 128-KB uniform sectors.

Features

  • 45-nm MIRRORBIT™ technology
  • Single supply for read/program/erase
  • Versatile I/O voltage (1.65 V to VCC)
  • ×8/×16 data bus
  • 512-byte programming buffer
  • Hardware ECC with single bit correction
  • Uniform 128-KB sectors
  • Advanced sector protection (ASP)
  • 100,000 program/erase cycles per sector
  • 20-year data retention (typical)
  • Power-up and low VCC write inhibit
  • Status Register, Data Polling, Ready/Busy pin

Benefits

  • High density for embedded applications
  • Flexible I/O supports various host systems
  • Fast programming with 512-byte buffer
  • Reliable data with built-in ECC
  • Simplifies memory management with uniform
  • Enhanced data security with ASP
  • Long device lifetime, 100K cycles per sector
  • Retains data up to 20 years
  • Prevents accidental writes during power
  • Easy status monitoring and diagnostics

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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