Active and preferred
RoHS Compliant
Lead-free

S27KL0642GABHA020

Data Sheet
package

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S27KL0642GABHA020
S27KL0642GABHA020
Data Sheet

Product details

  • Density
    64 MBit
  • Family
    KL-2
  • Initial Access Time
    35 ns
  • Interface Bandwidth
    400 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    - / 200
  • Interfaces
    HYPERBUS
  • Lead Ball Finish
    N/A
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2.7 V to 3.6 V
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    See roadmap
  • Qualification
    Automotive
  • Technology
    HYPERRAM
Recommended
OPN
S27KL0642GABHA020
Product Status active and preferred
Infineon Package
PG-BGA-24
Package Name FBGA-24 (002-15550)
Packing Size 338
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-BGA-24
Package Name FBGA-24 (002-15550)
Packing Size 338
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S27KL0642GABHA020 is a 64 Mb HYPERRAM™ self-refresh DRAM (PSRAM) for HYPERBUS™ expansion memory. It supports DDR transfers with an 8-bit data bus at up to 200 MHz clock and 400 MBps (3,200 Mbps) throughput, with 35 ns max access time. The 3.0 V-only device operates from 2.7 V to 3.60 V and supports wrapped or linear burst, hybrid burst, Hybrid Sleep, deep power-down, and optional DCARS.

Features

  • HYPERBUS™ interface
  • 1.8 V or 3.0 V I/O support
  • Single-ended or diff clock option
  • 8-bit DDR data bus (DQ[7:0])
  • RWDS strobe and write data mask
  • Optional DCARS read strobe
  • 200 MHz maximum clock rate
  • Up to 400 MBps data throughput
  • Max access time (tACC) 35 ns
  • Hybrid sleep retains data
  • Deep power-down stops refresh
  • ESD: 2 kV HBM, 500 V CDM

Benefits

  • Fast MCU memory expansion over x8
  • Works with 1.8 V or 3.0 V rails
  • Clock options ease PCB constraints
  • DDR x8 reduces routing complexity
  • RWDS improves DDR timing margins
  • DCARS widens read data eye margin
  • 200 MHz supports high bandwidth I/O
  • 400 MBps enables fast frame buffers
  • 35 ns tACC reduces access latency
  • Hybrid sleep saves power, keeps data
  • DPD minimizes power when data not needed
  • High ESD improves handling robustness

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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