Active and preferred
RoHS Compliant
Lead-free

S25FL512SDPMFVG11

Data Sheet
package
software

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S25FL512SDPMFVG11
S25FL512SDPMFVG11
Data Sheet

Product details

  • Density
    512 MBit
  • Family
    FL-S
  • Interface Bandwidth
    66 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    133 / 66
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Matte Tin Plating
  • Operating Temperature
    -40 °C to 105 °C
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Industrial
Recommended
OPN
S25FL512SDPMFVG11
Product Status active and preferred
Infineon Package
PG-DSO-16
Package Name SOIC-16 (002-15547)
Packing Size 235
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-DSO-16
Package Name SOIC-16 (002-15547)
Packing Size 235
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S25FL512SDPMFVG11 is a 512 Mb SPI Multi-I/O NOR flash memory using MIRRORBIT™ technology and Eclipse™ architecture. It supports single, dual, quad, and DDR SPI interfaces with read speeds up to 80 MBps. Operating from 2.7 V to 3.6 V core and 1.65 V to 3.6 V I/O, it is available in SOIC and BGA packages, qualified to AEC-Q100 grades. With 100,000 cycles, 20-year retention, sector protection, and OTP security, it is ideal for embedded code storage and automotive use.

Features

  • CMOS 3.0 V core with versatile I/O
  • SPI with multi I/O and DDR option
  • 32-bit extended addressing
  • Normal, Fast, Dual, Quad, DDR read
  • 512-byte page programming buffer
  • Automatic ECC with single bit correction
  • Uniform 256-KB sectors
  • 100,000 program-erase cycles min
  • 20-year data retention min
  • 1024-byte OTP secure region
  • Block and advanced sector protection
  • Core VCC: 2.7 V to 3.6 V, VIO: 1.65 V to

Benefits

  • Flexible 3.0 V operation simplifies design
  • High-speed SPI enables fast data access
  • Large address space supports big systems
  • Multiple read modes optimize performance
  • Fast programming boosts throughput
  • ECC ensures reliable data storage
  • Uniform sectors simplify erase operations
  • High endurance lowers maintenance cost
  • Long retention secures data for years
  • OTP region enhances system security
  • Robust protection prevents data loss
  • Wide voltage range fits varied platforms

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }